Si/CdTe semiconductor compton camera

Watanabe, Toru; Nakazawa,; Takashima,; Tanaka, M.; Mitani,; Oonuki,; Takahashi, Daisuke; Tajima,; Fukazawa,; Nomachi,; Kubo,; Ônishi, Yoshihiro; Kuroda,

doi:10.1109/nssmic.2004.1466837

Cited by 20 publications

(23 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…THE PROTOTYPE CAMERA ISAS/JAXA group, a Japanese space science research institute, has developed a Si/CdTe Compton camera [4], [5] for the ASTRO-H satellite mission scheduled for launch in 2014 [6], [7]. Because details of the detector configuration and data acquisition for the prototype camera are reported in Takeda et al [8], we briefly explain the system.…”

Section: Demonstration Of In-vivomentioning

confidence: 99%

Demonstration of in-vivo Multi-Probe Tracker Based on a Si/CdTe Semiconductor Compton Camera

Takeda

Odaka

Ishikawa

et al. 2012

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

By using a prototype Compton camera consisting of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors, originally developed for the ASTRO-H satellite mission, an experiment involving imaging multiple radiopharmaceuticals injected into a living mouse was conducted to study its feasibility for medical imaging. The accumulation of both iodinated methylnorcholestenol and Sr into the mouse's organs was simultaneously imaged by the prototype. This result implies that the Compton camera is expected to become a multi-probe tracker available in nuclear medicine and small animal imaging.Index Terms-Astrophysics, nuclear medicine, Si/CdTe semiconductor compton camera, small animal imaging.

show abstract

Section: Demonstration Of In-vivomentioning

confidence: 99%

Demonstration of in-vivo Multi-Probe Tracker Based on a Si/CdTe Semiconductor Compton Camera

Takeda

Odaka

Ishikawa

et al. 2012

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…However, most of these cameras have been developed based on combining a semiconductor such as silicon with scintillators. Taking advantage of significant progress, we have performed in CdTe technology [lO], [11], [14], we have been developing a new generation of Compton telescope [4], [15], [16], the semiconductor Compton telescope by combining Si and CdTe, as the Si/CdTe semiconductor Compton camera. Since CdTe has large atomic numbers (48, 52) and high density (5.8 g/cm 3 ), it offers the potential to replace scintillators and to form a full-semiconductor Compton camera.…”

Section: Si/cdte Compton Cameramentioning

confidence: 99%

Visualization of radioactive substances with a Si/CdTe Compton Camera

Takahashi

Takeda

Tajima

et al. 2012

2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

View full text Add to dashboard Cite

Dust containing radioactive materials dispersed fol lowing the Fukushima nuclear power plant accident in March 2011. Gamma-rays are emitted in the process when unstable nuclei in the materials decay. Based on the technology of Si/CdTe Compton Camera, we have manufactured a quick prototype model for the use in the field. The camera, now called a "Ultra-Wide-Angle Compton Camera" was successfully applied to visualize the distribution of radio-active substances in the Fukushima area.

show abstract

“…It should be noted that we can also measure polarization of incident gamma-rays from the azimuthal distribution of Compton scattered photons. The demonstration of the polarization measurement was performed by using a fully polarized synchrotron beam in the Spring 8 facility [9,32].…”

Section: Fig 11mentioning

confidence: 99%

A Si/CdTe Compton Camera for gamma-ray lens experiment

Takahashi

2006

Exp Astron

View full text Add to dashboard Cite

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γ -ray detection. However, a considerable amount of charge loss in these detectors results in a reduced energy resolution. We have achieved a significant improvement in the spectral properties by forming the Schottky junction on the Te side of the CdTe wafer. With the further reduction of leakage current by an adoption of guard ring structure, we have demonstrated a CdTe pixel detector with high energy resolution and full charge collection capabilty. The detector has a pixel size of a few mm and a thickness of 0.5 − 1 mm. We apply this high resolution detector to a new silicon and CdTe Compton Camera which features high angular resolution. We also describe a concept of the stack detector which consists of many thin CdTe layers and provides sufficient efficiency for hard X-rays and gamma-rays up to several hundred keV maintaining good energy resolution. A narrow-FOV Compton telescope can be realized by installing a Si/CdTe Compton Camera inside the deep well of an active shield. This configuration is very suitable as focal plane detector for future focusing gamma-ray missions.

show abstract

Si/CdTe semiconductor compton camera

Cited by 20 publications

References 10 publications

Demonstration of in-vivo Multi-Probe Tracker Based on a Si/CdTe Semiconductor Compton Camera

Demonstration of in-vivo Multi-Probe Tracker Based on a Si/CdTe Semiconductor Compton Camera

Visualization of radioactive substances with a Si/CdTe Compton Camera

A Si/CdTe Compton Camera for gamma-ray lens experiment

Contact Info

Product

Resources

About