Si Donor Incorporation in GaN Nanowires

Fang, Zhihua; Robin, Éric; Rozas, Elena; Cros, A.; Donatini, Fabrice; Mollard, Nicolas; Pernot, Julien; Daudin, B.

doi:10.1021/acs.nanolett.5b02634

Cited by 79 publications

(94 citation statements)

References 51 publications

(108 reference statements)

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“…Such an effect is attributed to the reduced lattice strain imposed by surface dopants compared to bulk dopants. A similar effect has also been measured in other semiconductor nanowires [42,[45][46][47]73]. The Mg incorporation into InN nanowires thus can be understood through two competing processes: (a) Mg surface desorption at elevated growth temperatures, and (b) enhanced Mg incorporation, due to the lowering of Mg formation energy.…”

Section: Mg-dopant Incorporationsupporting

confidence: 70%

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Zhao

2017

Crystals

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p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown p-type InN and AlN-two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV) optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

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Section: Mg-dopant Incorporationsupporting

confidence: 70%

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Zhao

2017

Crystals

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“…[18][19][20][21][22][23][24][25][26][27][28][29][30] The promise of AlGaN nanowires stems not only from their low defect densities, but more importantly, their surface enhanced p-type dopant (Mg) incorporation. It has been demonstrated, both experimentally and theoretically, that Mg-dopant incorporation is significantly enhanced in AlN, InN, and GaN nanowire structures compared to their bulk counterparts, 26,[31][32][33] thereby promising very efficient p-type conduction in wide bandgap Al-rich AlGaN that was not possible previously. However, with the use of conventional chemical vapor deposition processes, Al-rich AlGaN nanowire structures only yield defect-related emissions in the wavelength range >300 nm.…”

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confidence: 95%

Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

et al. 2016

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Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wavelengths less than 250 nm have remained inaccessible. Here we show that Al-rich AlGaN nanowires with much improved compositional uniformity can be achieved in a new growth paradigm, wherein a precise control on the optical bandgap of ternary AlGaN nanowires can be achieved by varying the substrate temperature. AlGaN nanowire LEDs, with emission wavelengths spanning from 236 to 280 nm, are also demonstrated.

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“…Fang et al studied the Si dopant distribution on the GaN NWs facets and found that the distribution was higher on the surface. 35 However, as evident from Fig. 4(e), all the vertices of the star-shaped GaN NWs have a higher concentration of the n-type dopant Si, which acts as a shape breaker of the conventional hexagonal GaN NWs structure.…”

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confidence: 95%

The synthesis of hybrid nanostructure comprising star-shaped GaN nanowires and Si nanoworms

et al. 2017

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Herein, we proposed a novel hybrid nanostructure comprising unique star-shaped GaN nanowires with Si nanoworms having drifting Au nanoparticles inside. Both nanostructures were simultaneously grown using a MOCVD chamber. Intentional stain was induced while growing the star-shaped GaN nanowires to achieve this new nanostructure. A planned experimental environment was deliberated to facilitate the simultaneous growth of the Si nanoworms along with the star-shaped GaN nanowires. After the growth process, various characterization techniques were applied to study the crystallinity and structural and optical properties of the hybrid structure. The growth mechanisms for both structures were also systematically investigated. It was found that a high concentration of the n-dopant source drives the growth of the star-shaped GaN nanowires by suppressing the lateral growth at the high dopant-concentrated vertices of the conventional hexagonal-shaped GaN nanowires. On the other hand, a surplus amount of the same dopant source assists the Si nanoworms to grow. Si nanoworms follow the base-growth mechanism, in which after a while, the Au nanoparticles start to drift inside the Si nanoworms. Finally, the photocurrent of the hybrid structure was measured and compared with that of the star-shaped GaN nanowires only. It is concluded from the photocurrent measurements that the grown hybrid structure is a better candidate for future optoelectronic devices.

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Si Donor Incorporation in GaN Nanowires

Cited by 79 publications

References 51 publications

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

The synthesis of hybrid nanostructure comprising star-shaped GaN nanowires and Si nanoworms

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