Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory

Resolving glass transition in Te-based phase-change materials by modulated differential scanning calorimetry

“…15) Hudgens and Johnson claimed that GST has a T g of 350°C. 16) Compared with the onset temperature of crystallization (T x ), which is ∼150°C for GST, 17,18) these values of T g seem to be overestimated, because the T g of the material is always lower than its T x . A model based on the correlation between T g and the enthalpy of atomization was presented for estimating the T g of a covalent amorphous material.…”

Effect of indium on phase-change characteristics and local chemical states of In–Ge–Sb–Te alloys

“…Doping has been one of the effective means of tuning the alloy's phase-change properties. Although a variety of dopants including nitrogen, 1,2 gallium, 3 aluminum, 4 indium, 5-8 silicon, 9 arsenic, 10 and selenium 11 has been utilized, detailed understanding of the effects of some dopants is still lacking. Especially we believe that indium ͑In͒ effect on the phasechange characteristics has not been clarified due to the phase segregation problem caused during the sample preparation.…”

Improved phase-change characteristics of Si doped GeSbTe thin films used for phase change memory

“…However large RESET current is a crucial issue before the commercial application of PCM [8]. In order to reduce the RESET current, many author focus on the optimizing the properties of phase change material [9,10], for example, increasing the crystalline state resistance of films by silicon doping [11][12][13].…”