Si-doping of MOCVD GaAs: Closer analysis of the incorporation process

Tang, Xiao; Lochs, H. G. M.; Hageman, P.R.; Croon, M.H.J.M. de; Giling, L.J.; Bons, Anton‐Jan

doi:10.1016/0022-0248(89)90323-0

Cited by 34 publications

(13 citation statements)

References 32 publications

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“…5) is accompanied with the Si Ga -V Ga complex for the highest SiH 4 partial pressure. During the process of identifying this characteristics emission it should be kept in mind that the Si concentration is high and that even Si precipitates have been formed [52]. Therefore, Si Ga atoms remain present in the solid, and their concentration may even have increased at this higher SiH 4 concentrations.…”

Section: Effect Of Ash 3 Mole Fractionmentioning

confidence: 99%

Si incorporation and Burstein–Moss shift in n-type GaAs

Hudait

Modak

Krupanidhi

1999

Materials Science and Engineering: B

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Silane (SiH 4 ) was used as an n-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium (TMGa) and arsine (AsH 3 ) as source materials. The electron carrier concentrations and silicon (Si) incorporation efficiency are studied by using Hall effect, electrochemical capacitance voltage profiler and low temperature photoluminescence (LTPL) spectroscopy. The influence of growth parameters, such as SiH 4 mole fraction, growth temperature, TMGa and AsH 3 mole fractions on the Si incorporation efficiency have been studied. The electron concentration increases with increasing SiH 4 mole fraction, growth temperature, and decreases with increasing TMGa and AsH 3 mole fractions. The decrease in electron concentration with increasing TMGa can be explained by vacancy control model. The PL experiments were carried out as a function of electron concentration (10 17 −1.). The PL main peak shifts to higher energy and the full width at half maximum (FWHM) increases with increasing electron concentrations. We have obtained an empirical relation for FWHM of PL,. We also obtained an empirical relation for the band gap shrinkage, DE g in Si-doped GaAs as a function of electron concentration. The value of DE g (eV) = −2.75×10 − 8 n 1/3 , indicates a significant band gap shrinkage at high doping levels. These relations are considered to provide a useful tool to determine the electron concentration in Si-doped GaAs by low temperature PL measurement. The electron concentration decreases with increasing TMGa and AsH 3 mole fractions and the main peak shifts to the lower energy side. The peak shifts towards the lower energy side with increasing TMGa variation can also be explained by vacancy control model.

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Section: Effect Of Ash 3 Mole Fractionmentioning

confidence: 99%

Si incorporation and Burstein–Moss shift in n-type GaAs

Hudait

Modak

Krupanidhi

1999

Materials Science and Engineering: B

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“…Gas phase decomposition of silane (1) and disThis zone, due the high activation energy for the ilane (3) are highly activated reactions with an decomposition, is very thin [11]. From the results activation energy of about 50 kcal/mol [10].…”

Section: °Amentioning

confidence: 68%

“…This also explains why there are no 3.2. SH4 doping depletion effects as observed for this doping process [11]. Assuming that SiH2 is the species that will…”

Section: °Amentioning

confidence: 99%

Temperature dependence of silicon doping of GaAs by SiH4 and Si2H6 in atmospheric pressure metalorganic chemical vapour deposition

Hageman

Tang

Croon

et al. 1989

Journal of Crystal Growth

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The temperature dependence of silicon doping in the metalorganic chemical vapour deposition process has been investigated in the temperature range 550 to 800°Cusing silane (SiH4) and disilane (Si2H6). The experiments have been carried out at atmospheric l~l2pressure in a long horizontal reactor. The silicon doping process with both silicon precursors appears to be strongly temperature dependent, with apparent activation energies Eact of 51.4±5.8kcal/mol (2.2±0.3eV) for silane and 45.5±4kcal/mol(2.0±0.2eV) for the doping process with disilane. A thorough analysis is given of the rate determining step in both cases based on the presence of a chemical boundary layer.

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“…The data presented here is consistent with the experimental data in Refs. 9 and 10, and also with the model proposed by Tang et al 11 These authors pointed out that the dopant incorporation is via step trapping. The step velocity will decrease as the misorientation increases or as growth temperature decreases.…”

Section: Si-and C-doping Efficiency For Different Substrate Misorientmentioning

confidence: 92%

Metalorganic vapor phase epitaxial growth of all-AlGaAs visible (∼700 nm) vertical-cavity surface-emitting lasers on misoriented substrates

Hou

Crawford

Hammons

et al. 1997

Journal of Elec Materi

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We present a study on the growth of visible (~700 nm) vertical-cavity surfaceemitting lasers (VCSELs) by metalorganic vapor phase epitaxy. The structure was based on AlGaAs for both the quantum well active region and the distributed Bragg reflectors. Photoluminescence intensity from AlGaAs quantum wells was optimized vs the substrate misorientations from the (100) surface. The doping efficiency for n-type by Si and p-type by C was studied as a function of the substrate misorientation and the growth temperature. High-quality VCSEL materials were grown on (311)A substrates. The structure was processed by selective oxidation, and high-performance VCSELs emitting at ~700 nm were achieved in a continuous-wave mode at room temperature.

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Si-doping of MOCVD GaAs: Closer analysis of the incorporation process

Cited by 34 publications

References 32 publications

Si incorporation and Burstein–Moss shift in n-type GaAs

Si incorporation and Burstein–Moss shift in n-type GaAs

Temperature dependence of silicon doping of GaAs by SiH4 and Si2H6 in atmospheric pressure metalorganic chemical vapour deposition

Metalorganic vapor phase epitaxial growth of all-AlGaAs visible (∼700 nm) vertical-cavity surface-emitting lasers on misoriented substrates

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