Metalorganic vapor phase epitaxial growth of all-AlGaAs visible (∼700 nm) vertical-cavity surface-emitting lasers on misoriented substrates

Abstract

We present a study on the growth of visible (~700 nm) vertical-cavity surfaceemitting lasers (VCSELs) by metalorganic vapor phase epitaxy. The structure was based on AlGaAs for both the quantum well active region and the distributed Bragg reflectors. Photoluminescence intensity from AlGaAs quantum wells was optimized vs the substrate misorientations from the (100) surface. The doping efficiency for n-type by Si and p-type by C was studied as a function of the substrate misorientation and the growth temperature. High-quality VCSEL materials were grown on (311)A substrates. The structure was processed by selective oxidation, and high-performance VCSELs emitting at ~700 nm were achieved in a continuous-wave mode at room temperature.

Advances in Red VCSEL Technology

“…We have fabricated devices with wavelengths in the range from 700 to 720 nm, but unlike previous reports [15][16][17][18][19][20] our devices are based upon GaInP/AlGaInP active regions. A large variation in wavelength across a single wafer was achieved by not rotating the wafer during growth.…”

“…The performance has been limited in output power and maximum temperature of operation. In some cases [18][19][20] the device only operated in pulsed mode at room temperature, while in other results [15][16][17] the devices did operate CW at room temperature, but the output power was limited to less than 1 mW.…”

“…Knigge et al [14] were able to achieve pulsed operation down to 629 nm, although no power was reported, and 2.1 mW of room temperature CW power at 647 nm. Several groups have reported efforts to extend the VCSEL wavelength into the range from 700 to 740 nm [15][16][17][18][19][20]. All of these efforts above 700 nm have been based upon the AlGaAs materials system for both the mirrors and the active regions.…”