SiO compound formation by oxygen ion implantation into silicon

Hensel, Edward; Wollschläger, K.; Schulze, Dietmar; Kreißig, U.; Skorupa, W.; Finster, J.

doi:10.1002/sia.740070502

Cited by 23 publications

(9 citation statements)

References 19 publications

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“…27 And so, any decrease in frequency of the Si-O-Si AS 1 vibration can theoretically be associated with a decrease in the Si-O-Si bond angle, within the range 90-180 , and consequently, like the aforementioned increase in FWHM, also an indication of an increase in strain within the Si-O-Si structure. [57][58][59] Therefore the presented ATR-FTIR analysis suggests that the intrinsic micro-structure of AP-PECVD synthesised amorphous silica densies as a function of increasing deposition input energy. The densication is conrmed by an increase in the presence of Si-O-Si groups due to removal of hydroxyl species, 12 Fig.…”

Section: Encapsulation Performancementioning

confidence: 99%

“…25,27,50,55 Therefore a decrease in the intensity of the AS 2 TO vibrational mode would also indicate a reduction in porosity and hence densication of the intrinsic microstructure of the silica network. The peak FWHM, widely acknowledged to be indicative of the degree of variation in bonding arrangements surrounding a particular functional group, 50,[57][58][59] can be seen to increase for all Si-O-Si stretching modes, as the deposition input energy increases. As the intrinsic silica network densies with a reduction in the concentration of network-disrupting silanol groups, 12 the distribution of Si-O-Si bond angles in the network is likely to increase, thereby resulting in an increase in the FWHM.…”

Section: Encapsulation Performancementioning

confidence: 99%

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Control of the intrinsic microstructure in AP-PECVD synthesised amorphous silica thin films

et al. 2017

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Amorphous single layered silica films deposited using industrially scalable roll-to-roll atmospheric pressure-plasma enhanced chemical vapor deposition were evaluated in terms of structureperformance relationships. Polarised attenuated total reflectance-Fourier transform infrared absorption spectroscopy and heavy water exposure to induce hydrogen-deuterium exchange revealed it was possible to control the film porosity simply by varying the precursor flux and plasma residence times.Denser silica network structures with fewer hydroxyl impurities, shorter Si-O bonds, decreased Si-O-Si bond angles and a greater magnitude of isolated pores were found in films deposited with decreased precursor flux and increased plasma residence times, and consequently exhibited significantly improved encapsulation performance. a FUJIFILM Manufacturing Europe B.V.,

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Section: Encapsulation Performancementioning

confidence: 99%

Section: Encapsulation Performancementioning

confidence: 99%

Control of the intrinsic microstructure in AP-PECVD synthesised amorphous silica thin films

et al. 2017

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“…The fitting process is able to reproduce each spectrum by four Gaussian bands, which represent the characteristics of the bulk Si-O-Si ͑1054 cm −1 ͒, surface Si-O-Si ͑1097 cm −1 ͒, Si= O mode ͑1157 cm −1 ͒, 42 and the component for the Si-O asymmetric stretching at ͑ϳ1240 cm −1 ͒. 46 These findings are in agreement with our PL results and support the hypothesis of the Si= O state mediated ϳ580 nm light emission discussed above. 44 A deviation of the Si-O-Si peak positions by ϳ50 cm −1 with respect to the values given in Ref.…”

Section: Ftir Studiesmentioning

confidence: 99%

Influence of annealing on the Er luminescence in Si-rich SiO2 layers coimplanted with Er ions

Kanjilal

Rebohle

Voelskow

et al. 2008

Journal of Applied Physics

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The impact of rapid thermal annealing ͑RTA͒ in producing samples by sequential implantation of Si and Er ions into a 200 nm SiO 2 layer combined with different annealing cycles as well as the corresponding room-temperature visible and infrared photoluminescence ͑PL͒ have been studied. The Er-related PL intensity at 1533 nm for the samples prepared by implanting Si with subsequent annealing, followed by Er implantation, and final annealing ͑type I͒ was found to be stronger than the one produced similarly but without the first annealing step ͑type II͒. In fact, the 1533 nm peak intensity in the optimized RTA processed sample is comparable to the PL yield of the furnace-annealed sample. Moreover, the excitation wavelength ͑405 nm͒ was found to be suitable for exciting the Si= O related point defects in the SiO 2 layer and can provide a PL band with a maximum at ϳ580 nm. While this band was further intensified in the presence of Si nanocrystals ͑Si NCs͒, it became weaker by introducing additional Er 3+ ions with a concomitant rise of the 1533 nm Er PL, confirming the visible range pumping of Er 3+ . The detailed spectral analyses suggest that the 580 nm band is the result of the excitation/deexcitation mechanism in molecule such as states in the Si= O or the Si= O state mediated recombination of carriers in Si NCs according to the model proposed by ͓Wolkin et al., Phys. Rev. Lett. 82, 197 ͑1999͔͒. The samples were further characterized by transmission electron microscopy and Fourier-transform infrared spectroscopy. The time-resolved PL measurements and a modeling by rate equations were also performed to determine and justify the energy migration mechanism from Si NC to the neighboring Er 3+ .

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“…Si + 0 2 Si0 2 3.93 eV [7] Solid Phase Epi Growth of Si 2.70 eV [8] SiOý Si + SiO 2 ("demixing") 0.19 eV [5] One potentially relevant process with an activation energy approaching 6 eV, is the removal of crystalline damage which Maher et al [9] associate with an activation energy of approximately 5 eV. For this reason, and because it appeared as if the damage removal was interfering with the coalescence of the layer in Fig.…”

Section: Discussionmentioning

confidence: 99%

“…If so, we should be able to extract an activation energy and thereby learn more about the mechanism involved. Previous work on this subject using X-ray photoemission spectroscopy (XPS) and infra-red (IR) spectroscopy was limited to lower annealing temperatures [5].…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of Formation of Thin Buried Oxide Layers by Ion Implantation

et al. 1987

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We have studied buried oxide formation as a function of implantation and annealing conditions. The layers appear to form via a nucleation and growth process, so the quality of the oxide and the perfection of the overlying crystalline Si layer depend more strongly on the substrate temperature during implantation than on the annealing temperature. Since it is easier to observe the layer formation process in 'a thin (<1000A) layer, we concentrated on sub-stoichiometric doses and chose substrate temperatures below 400 0 C to stay in a homogeneous nucleation regime. Then we varied the annealing temperature from 11500C to 1407'C. Modeling the coalescence of the oxide layer as a thermally-activated process yields activation energies of approximately 6 eV, suggesting that crystalline damage removal may be the bottleneck for this substrate temperature regime. INTRODUCTIONMuch of the work to date on buried oxide layers formed by ion implantation involves doses of enough oxygen (>l.8xl0+lS/cm 2 ) to form a stoichiometric oxide layer during implantation [1]. This layer is then a minimum of 3000A thick after annealing. In contrast, we have been concentrating on doses which are almost an order of magnoitude lower [2]. These gppear as roughly gaussian profiles within the Si (FWHM of -1800A, at a depth of -4000A). A subsequent high temperature anneal then causes the oxygen to travel up the concentration gradient and coalesce to a narrow (-600X) stoichiometric SiO 2 layer. The advantage to studying thinner layers is that the growth process of the layers can be examined in detail. Lower doses also mean shorter implant times and lower defect densities in the Si overlayer. Moreover, Silicon-on-Insulator (SOI) structures with thin oxides have a higher capacitance and therefore require lower charging energies. The disadvantages of this technique can be summarized by noting that it is more difficult to fat ricate a continuous narrow oxide layer* the substrate temperature during the implantation is more crucial and higher temperature anneals are necessary. Our goal is to understand the mechanisms of formation of these layers in order to be able to optimize them.Our results on the role of substrate temperature in the formation of these layers were presented at the Fall 1986 MRS Meeting (3]. Basically, we showed that the layer formation involves a competition between nucleation and growth of SiO 2 precipitates. This means that the substrate temperature during implantation is particularly important. At low substrate temperatures (_310'C), the incoming ions create a substantial amount of damage which provides a myriad of nucleation sites. As a result, nucleation of SiO 2 precipitates occurs uniformly over the region of the implant and a uniform layer forms easily as the temperature of the sample is raised for the anneal. Unfortunately, regrowth of the heavily oxygenated Si does not proceed smoothly and twins are the inevitable consequence. At higher substrate temperatures (>400 0 C), dynamic annealing during the implant causes real time dam...

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SiO compound formation by oxygen ion implantation into silicon

Cited by 23 publications

References 19 publications

Control of the intrinsic microstructure in AP-PECVD synthesised amorphous silica thin films

Control of the intrinsic microstructure in AP-PECVD synthesised amorphous silica thin films

Influence of annealing on the Er luminescence in Si-rich SiO2 layers coimplanted with Er ions

Mechanisms of Formation of Thin Buried Oxide Layers by Ion Implantation

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