Si/PEDOT:PSS Hybrid Solar Cells with Advanced Antireflection and Back Surface Field Designs

Sun, Yiling; Yang, Zhenhai; Gao, Pingqi; He, Jiasong; Yang, Xi; Sheng, Jiang; Wu, Sudong; Xiang, Yong; Ye, Jichun

doi:10.1186/s11671-016-1560-0

Cited by 15 publications

(23 citation statements)

References 33 publications

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“…Conducting polymer TE materials possess the advantages of low κ, good flexibility and low cost in comparison with inorganic materials. [1][2][3][4] Among them, commercially available PEDOT:polystyrenesulfonate (PEDOT:PSS) has received the most attention due to its excellent water processability and high σ ( refs 5-11 ) and is also widely used as an electrode or conductive adhesive material in applications including solar cells, 12,13 organic light-emitting diodes (OLEDs), 14,15 supercapacitors, 16,17 sensors 18,19 and so on. The PSS polyanion enables the formation of aqueous PEDOT:PSS solutions, which benefits both film printing and the synthesis of hybrid materials.…”

Section: Introductionmentioning

confidence: 99%

Micron-thick highly conductive PEDOT films synthesized via self-inhibited polymerization: roles of anions

Shi

Qin

et al. 2017

NPG Asia Mater

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The inhibitor-dependent poly(3,4-ethylenedioxythiophene) (PEDOT) fabrication suffers major problems in the areas of controllability and film thickness. In this work, we found that anions play a key role in both the polymerization and the structure of PEDOT. As a precursor, anions greatly influence the reaction rate and oxidant solubility. In its role as a counter-ion, the anions also affect chain conductance and crystal growth. With these behaviors in mind, a self-inhibited polymerization approach using novel oxidants with appropriate anions was successfully developed to facilitate the fabrication of high quality in situ polymerized PEDOT films and solve the thickness limitation problem. Inhibitor-free heavy oxidative solutions with weakly basic anions enable the spin-coating of thick and homogeneous oxidant layers and also effectively inhibit both the crystallization of the oxidant and H + formation throughout the polymerization process. PEDOT: dodecylbenzenesulfonate (PEDOT:DBSA) exhibits the highest performance among all candidates due to its appropriate anion basicity and low steric effect. An extremely high doping level of 42.9% is achieved, and an electrical conductivity of~1100 S cm − 1 is successfully maintained for film thicknesses between 310 nm and 1.79 μm. In addition, the thermoelectric power factor (RT) for pristine films was improved to 77.2 μW mK − 2 from 69.6 μW mK − 2 by the dedoping treatment. This study provides a new approach for fabricating high performance PEDOT thick films using anion-based design. NPG Asia Materials (2017) 9, e405; doi:10.1038/am.2017.107; published online 14 July 2017 INTRODUCTION Thermoelectric (TE) materials realize direct conversion between heat and electricity, which can be used in refrigeration and power generation. The performance of TE materials is characterized by the ZT value (S 2 σT/κ) or power factor (S 2 σ), where S, σ, T and κ are the Seebeck coefficient, electrical conductivity, absolute temperature and thermal conductivity, respectively. Conducting polymer TE materials possess the advantages of low κ, good flexibility and low cost in comparison with inorganic materials. 1-4 Among them, commercially available PEDOT:polystyrenesulfonate (PEDOT:PSS) has received the most attention due to its excellent water processability and high σ ( refs 5-11 ) and is also widely used as an electrode or conductive adhesive material in applications including solar cells, 12,13 organic light-emitting diodes (OLEDs), 14,15 supercapacitors, 16,17 sensors 18,19 and so on. The PSS polyanion enables the formation of aqueous PEDOT:PSS solutions, which benefits both film printing and the synthesis of hybrid materials. However, such PSS-based processes also experience difficulties with performance optimization. For example, the insulating PSS lamellas remain in the polymer matrix, 20,21 resulting in an amorphous polymer 22 with limited σ and S. 5,9 Compared to PEDOT:PSS, PEDOT doped with smallsized anions (S-PEDOTs), such as tosylate (OTs) or triflate (OTf), have greater potential...

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Section: Introductionmentioning

confidence: 99%

Micron-thick highly conductive PEDOT films synthesized via self-inhibited polymerization: roles of anions

Shi

Qin

et al. 2017

NPG Asia Mater

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“…As discussed earlier, the PEDOT:PSS thickness of 100 ± 20 nm is optimum to get a preferential AR effect and lower parasitic absorption and thus a high J sc and other solar cell performance parameters in the front PEDOT:PSS geometry. ,, Also, the passivation effect has a close relation with the thickness of the PEDOT:PSS layer; a thinner layer has poorer passivation (higher S eff ), and a thicker one has much improved passivation (quite low S eff ) properties . However, thicker PEDOT:PSS films can also cause increased parasitic absorption and hence have a detrimental effect on the electrical property of the PEDOT:PSS/Si junction . The average thickness of the PEDOT:PSS film for S 30 is higher (145 ± 17 nm) as compared to that of S 60 (100 ± 20 nm) (see Figure d).…”

Section: Resultsmentioning

confidence: 92%

“…From the above, it is obvious that the PEDOT:PSS layer also acts as an effective AR coating. The AR property of the PEDOT:PSS films on planar Si surfaces has been reported earlier in the visible range. , Also, there have been few reports on AR properties of DMSO/EG-doped PEDOT:PSS thin films on planar Si surfaces in the terahertz (THz) frequencies. , However, the AR properties of the PEDOT:PSS layer on the microstructured Si surfaces consisting of varying dimensions and distributions of the micropyramids have rarely been reported. No doubt, the PEDOT:PSS thin films have small parasitic absorption loss which depends on its thickness. , …”

Section: Resultsmentioning

confidence: 99%

“…A thinner PEDOT:PSS layer (∼50 nm) has a poorer passivation property (less τ eff , higher S eff ), and a thicker layer (∼200 nm) has a much improved passivation property (quite low S eff ) . However, too thick (∼200 nm) PEDOT:PSS can also cause increased parasitic absorption and hence may have a detrimental effect on the electrical property of the PEDOT:PSS/Si junction …”

Section: Resultsmentioning

confidence: 99%

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Highly Efficient PEDOT:PSS/Silicon Hybrid Solar Cells via Effective Surface Microengineering of Low-Cost Solar-Grade Silicon Wafers

Srivastava

Sharma

Kumari

et al. 2021

ACS Appl. Energy Mater.

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The organic carrier-selective layer, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) coated on Si wafers, has attracted a lot of attention toward the development of low-cost and efficient hybrid solar cells (HSCs). Here, highly efficient PEDOT:PSS/Si HSCs are reported via an effective surface microengineering of the as-cut, low-cost solar-grade thin Si wafers, an aspect rarely addressed before, by a simple one-step aqueous KOH process. The influence of surface microstructuring on their light harvesting properties, polymer/Si junction formation, and photovoltaic (PV) performance of the PEDOT:PSS/Si HSCs are investigated. The simple one-step process under the optimized processing conditions reduces the weighted surface reflectivity from >35 to <9% in a broad spectral range in addition to removing the surface saw damages of the wafers completely. The combined effect in turn improves the PEDOT:PSS/Si interface (junction) property, leading to a highly efficient PEDOT:PSS/Si HSC even in its simplest possible device structure. Moreover, the antireflective and surface passivation properties of the PEDOT:PSS layer for the microstructured Si surfaces are also demonstrated. The optimized microsurface and cell processing conditions resulted in the HSCs with a photoconversion efficiency >12.25%, which is absolute ∼9.70% (∼5 folds) higher when compared to that on starting non-structured Si wafers. The results are further supported by detailed dark J–V characteristics and quantum efficiency analysis of the devices. The study establishes that microengineering of the commercial as-cut Si wafers removes the surface damages on both sides which if not addressed properly cause very high surface recombination losses and have a detrimental effect on the polymer/Si junction and hence the PV performances. The study paves the way to develop simple yet efficient HSCs on such economic solar-grade Si wafers commonly used for the conventional Si solar cells.

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“…The n -type-doped Si with a thickness of 300 μm and a resistivity of 1~5 Ω·cm (i.e., doping concentration, 1.0~4.7 × 10 15 cm –3 ) was used in our experiment, which is well matched with p -type PEDOT:PSS. Detailed experimental fabrication process can be found in our previous publications [6, 8, 13, 16]. A highly conductive PEDOT:PSS with thickness of ~103 nm was spin coated on the front surface of Si to work as an antireflection and hole-conductive layer [20], as well as to form a junction [21].…”

Section: Methodsmentioning

confidence: 99%

Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells

et al. 2017

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The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

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Si/PEDOT:PSS Hybrid Solar Cells with Advanced Antireflection and Back Surface Field Designs

Cited by 15 publications

References 33 publications

Micron-thick highly conductive PEDOT films synthesized via self-inhibited polymerization: roles of anions

Micron-thick highly conductive PEDOT films synthesized via self-inhibited polymerization: roles of anions

Highly Efficient PEDOT:PSS/Silicon Hybrid Solar Cells via Effective Surface Microengineering of Low-Cost Solar-Grade Silicon Wafers

Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells

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