Si rib waveguide photodetector with an ordered array of Ge islands for 15 μm

Abstract

This work demonstrates a rib waveguide photodetector based on a vertical Si p-i-n junction with Ge islands operating in the spectral region around lambda=1.55 microm at room temperature. A vertical stack of four layers of Ge islands is grown by molecular beam epitaxy on a silicon-on-insulator. Each layer is organized in a two-dimensional square grid with a period of 460 nm. The spectral response of the detector extends well beyond 1.6 mum at 300 K. The absorption length of approximately 135 microm (at 1/e decrease of intensity) at lambda=1.55 microm along the waveguide allows for relatively small-size devices for all-on-one-platform integration.

Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing

“…The Ge=Sið100Þ material system is regarded as prototypical for investigating the basic phenomena leading to the formation and evolution of ''self-assembled quantum dots'' [1][2][3][4][5]. Technologically, Ge=Sið100Þ is of interest for possible applications in electronic [6,7] and optoelectronic devices [8,9]. As an example, strained Si channels on top of buried, coherent SiGe islands may be used for field effect transistors with enhanced electron mobility [6].…”

Effect of Interstitials Embedded in Pre‐Patterned Si Substrate on Location of Ge Nanoislands

“…[1][2][3][4][5] Technologically, Ge/ Si(100) is of interest for possible applications in electronic [6,7] and optoelectronic devices. [8,9] As an example, strained Si channels on top of buried, coherent SiGe islands may be used for field effect transistors with enhanced electron mobility. [6] For such an application, site controlled SiGe islands are necessary.…”

Site‐controlled SiGe islands on patterned Si(001): Morphology, composition profiles, and devices

“…Fundamentally, the Ge/Si(100) material system is regarded as prototypical for investigating the basic phenomena leading to the formation of “self‐assembled quantum dots” 2–10. Technologically, the Ge/Si(100) system is of interest for possible applications in electronic 11–14, thermoelectric 15, and optoelectronic devices 16, 17. For the latter it is particularly interesting for detection of light in the 1.5 µm wavelength range and its convenient integration with the mature Si technology 16.…”

“…Technologically, the Ge/Si(100) system is of interest for possible applications in electronic 11–14, thermoelectric 15, and optoelectronic devices 16, 17. For the latter it is particularly interesting for detection of light in the 1.5 µm wavelength range and its convenient integration with the mature Si technology 16.…”