Si₃N₄ as a Useful Dielectric for InGaAs MIS Stacks

Abstract

Fully unpinned behavior of the Si3N4 (PECVD)/InGaAs system with Dit ~ 10^12 eV-1 cm-2 was observed after 400C 30 min annealing. No influences of ambient gas treatment conditions or treatment order relative to gate metal deposition on C-V behavior and Dit values were observed. Influence of the annealing temperature on C-V behavior and Dit was explored in the range 300C - 500C. It was found that 400C anneal shows the best C-V behavior and the lowest Dit values for the Si3N4 (PECVD)/InGaAs system. Slightly better results of the accumulation frequency dispersion and flat-band hysteresis were observed for forming gas treatment compared to N2/vacuum anneals.

Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces

“…We conclude that the thermal treatment reduced the recombination center concentration at the interface of both dielectrics. It is interesting to note that significant improvement of the CV characteristics after thermal treatment was observed for similar Si 3 N 4 based MIS capacitors fabricated in our laboratory (21), but no improvement of the CV curves following thermal treatment was observed for Al 2 O 3 based MIS capacitors. The TEBT is thus an additional sensitive tool for probing the interface quality revealing small effects not measurable in conventional CV measurements, which may be crucial for the proper operation of MIS field effect transistors.…”