Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

Palumbo, F.; Lombardo, S.; Eizenberg, M.

doi:10.1016/j.microrel.2015.10.009

Cited by 6 publications

(11 citation statements)

References 17 publications

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“…As demonstrated in Ref. 13, this initial current has no effect on the dynamics of the breakdown event. To quantify the obtained results, the rise-time (t r ) was extracted for each BD transient.…”

Section: A Breakdown Transientsmentioning

confidence: 69%

“…Figure 3(a) shows the current dependence with time for the HfO 2 devices at voltages ranging from 3.5 V to 4 V while 3(b) corresponds to Al 2 O 3 devices stressed at voltages ranging from 4.2 V to 5 V. Although it is not the topic of this paper, it is possible to see the influence of the initial current on the TBD and that the onset of the PBD gets shorter as the applied voltage increases, as previously reported for MOS structures. 13 Comparing Figs. 3(a) and 3(b), it is observed that the duration of PBD in Al 2 O 3 is around the same value as for HfO 2 but obtained at higher applied voltages, ranging from 4.2 V up to 5 V.…”

Section: A Breakdown Transientsmentioning

confidence: 99%

“…I-t curves show the general features of PBD previously reported for MOS structures. 4,5,8,9,13,14 Three different stages can be identified in these plots: current transient begins with a negative slope likely associated with the build up of defects within the oxide layer. This process ends with the formation of the percolation path.…”

Section: A Breakdown Transientsmentioning

confidence: 99%

“…3 show that Q BD is not constant as a function of stress voltage in agreement with previous results. 13 Calculating Q BD according to Ref. 12, it is observed as a small decrease of Q BD as the stress voltage increase.…”

Section: A Breakdown Transientsmentioning

confidence: 99%

“…This is in agreement with previously reported results on MOS stacks. 8,9,13 The main point of Fig. 3(c) is the difference between the two sets of devices.…”

Section: A Breakdown Transientsmentioning

confidence: 99%

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Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

Pazos

Aguirre

Miranda

et al. 2017

Journal of Applied Physics

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In this work, the breakdown transients of Al 2 O 3 -and HfO 2 -based metal-insulator-metal (MIM) stacks with the same oxide thickness and identical metal electrodes were compared. Their connection with the thermal properties of the materials was investigated using alternative experimental setups. The differences and similarities between these transients in the fast and progressive breakdown regimes were assessed. According to the obtained results, Al 2 O 3 exhibits longer breakdown transients than HfO 2 and requires a higher voltage to initiate a very fast current runaway across the dielectric film. This distinctive behavior is ascribed to the higher thermal conductivity of Al 2 O 3 . Overall results link the breakdown process to the thermal properties of the oxides under test rather than to dissipation effects occurring at the metal electrodes. Published by AIP Publishing.

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Section: A Breakdown Transientsmentioning

confidence: 69%

Section: A Breakdown Transientsmentioning

confidence: 99%

Section: A Breakdown Transientsmentioning

confidence: 99%

Section: A Breakdown Transientsmentioning

confidence: 99%

“…This is in agreement with previously reported results on MOS stacks. 8,9,13 The main point of Fig. 3(c) is the difference between the two sets of devices.…”

Section: A Breakdown Transientsmentioning

confidence: 99%

See 3 more Smart Citations

Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

Pazos

Aguirre

Miranda

et al. 2017

Journal of Applied Physics

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Thermal conductivity-structure-processing relationships for amorphous nano-porous organo-silicate thin films

et al. 2019

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Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study

Pazos

Baldomá

Aguirre

et al. 2020

Journal of Applied Physics

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The role of the bilayered structure of the gate oxide on the dynamics of progressive breakdown is systematically studied on Au/Cr/HfO2/Al2O3/InGaAs metal–oxide–semiconductor stacks. Samples with bilayered oxides of 100 Å total thickness were fabricated using different Al2O3 interfacial layer thicknesses to investigate the effects of combining insulator materials with largely different electrical and thermal properties. The breakdown current growth rate dIBD/dt was captured by means of low and high bandwidth measurement setups, and the results were compared in the framework of an electromigration-based progressive breakdown model, originally derived for single-layered oxides. Experimental results show that as the interfacial layer is thicker, a clear increase is observed on the applied voltage required to obtain dIBD/dt values in the same range. However, this effect is not observed for thicknesses above 10 Å for the Al2O3 layer. This is linked to both the electrical stress distribution across the bilayered structure and to the thermal characteristics of Al2O3 that contribute to reduce the temperature of the breakdown spot. The progressive breakdown model is modified to account for these features, showing good agreement with experimental results, behavior that cannot be explained by the model considering one of the layers as already broken during progressive breakdown.

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Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

Cited by 6 publications

References 17 publications

Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

Thermal conductivity-structure-processing relationships for amorphous nano-porous organo-silicate thin films

Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study

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