Thermal conductivity-structure-processing relationships for amorphous nano-porous organo-silicate thin films

Harikrishna, Hari; Huxtable, Scott T.; Shir, Ira Ben; Kababya, Shifi; Schmidt, Asher; Dutta, Dhanadeep; Liu, Ming; Gidley, David W.; Lanford, W. A.; Hellgren, Niklas; Ege, Canay; Mays, E.; Bielefeld, J.; King, Sean W.

doi:10.1007/s10934-019-00836-5

Cited by 8 publications

(3 citation statements)

References 122 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our results on the thermal conductivity of BN polytypes are extremely similar to those of most nanoporous materials, including g-B3N5 (21.08 W/(m K)), 160 nanoporous Si (0.6− 7.1 W/(m K)), 161 nanoporous silica (about 2 W/(m K)), 162 silicate (1.6 W/(m K)), 163 and nanoporous TaS 3 (approximately 2.3 W/(m K)), 164 although they are lower compared to other BN polytypes. Despite the fact that they occur at low or high temperatures, low-frequency phonons have a substantially longer lifetime.…”

Section: The Journal Of Physical Chemistry Csupporting

confidence: 70%

First-Principles Calculations to Investigate the Structural, Electronic, Optical, and Elastic Constants; Thermal Conductivity; Raman Scattering; Mulliken Population; and XPS Loss Features of Boron Nitride Polytypes

Zhang,

Jiao,

S. K. S

et al. 2023

J. Phys. Chem. C

View full text Add to dashboard Cite

We systematically studied the structural properties, energetics, charge density, electronic structure, optical properties, hardness, elastic anisotropy properties, mechanical properties, lattice dynamics, thermodynamics, thermal conductivity, Raman scattering, Mulliken population, and core-level X-ray photoelectron spectroscopic (XPS) loss features of boron nitride polytypes and implemented CAmbridge Serial Total Energy Package (CASTEP) code for first-principles calculations based on density functional theory (DFT) along with generalized gradient approximation (GGA) with Perdew−Burke−Ernzerhof (GGA-PBE) exchangecorrelation potential. Our findings on structural parameters agree strongly with the experimental values, with an average error of less than 1%. The acoustic Debye temperature of the boron nitride (BN) polytype is about 1680 K for h-B2N2, 1877 K for c-B4N4, and 1880 K for w-B2N2. The specific heat capacities of h-B2N2, w-B2N2, and c-B4N4 are about 9.437, 7.895, and 3.91 J/(mol K) at 300 K, respectively. To identify significant features and understand the sensitivity of BN polytypes, we estimate that the thermal conductivities for h-B2N2, w-B2N2, and c-B4N4 are 3.905, 10.156, and 22.038 W/(m K) at 300 K, respectively. The elastic constants state that the BN polytypes are mechanically stable and h-B2N2 has a strong anisotropy. The electronic structures reveal that w-B2N2 has a direct band gap of 5.232 eV, while h-B2N2 and c-B4N4 are wide-and indirect-band-gap semiconductors with band gaps of 4.329 and 4.530 eV, respectively. The maximum absorption coefficients in the investigated energy range are 538.50 and 513.66 cm −1 for c-B4N4 and w-B2N2, respectively. The spectra of the K-edge (1s) of the B and N sites have a sharp π* and a broader σ* in the energy region between 5 and 50 eV. These results indicate that BN is a promising material for heat dissipation and has a lot of potential in the development of novel microelectronic devices because of their low density, exceptional strength, high flexibility and stretchability, good thermal stability, and excellent impermeability.

show abstract

Section: The Journal Of Physical Chemistry Csupporting

confidence: 70%

First-Principles Calculations to Investigate the Structural, Electronic, Optical, and Elastic Constants; Thermal Conductivity; Raman Scattering; Mulliken Population; and XPS Loss Features of Boron Nitride Polytypes

Zhang,

Jiao,

S. K. S

et al. 2023

J. Phys. Chem. C

View full text Add to dashboard Cite

show abstract

“…Constrained by the experimental environment, we used the native oxide layer of the silicon substrate as the dielectric layer instead of a low- k dielectric material. It is known that, owing to different growth conditions, porosity, and composition, the thermal properties of low- k dielectric materials are different from those of the native oxide. − Despite having the same SiO 2 base as low- k dielectrics, the use of native oxides may lead to an overestimation or underestimation of the TBR owing to their different interfacial properties. However, this is beyond the scope of the present study because we focused on studying the effects of liner/barrier layers on TBR.…”

Section: Experiments and Simulationmentioning

confidence: 99%

Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interlayer on Temperature Increase of Interconnects in Deeply Scaled VLSI

Zhan

Oda

et al. 2020

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Temperature increase in the continuously narrowing interconnects accelerates the performance and reliability degradation of very large scale integration (VLSI). Thermal boundary resistance (TBR) between an interconnect metal and dielectric interlayer has been neglected or treated approximately in conventional thermal analyses, resulting in significant uncertainties in performance and reliability. In this study, we investigated the effects of TBR between an interconnect metal and dielectric interlayer on temperature increase of Cu, Co, and Ru interconnects in deeply scaled VLSI. Results indicate that the measured TBR is significantly higher than the values predicted by the diffuse mismatch model and varies widely from 1 × 10 −8 to 1 × 10 −7 m 2 K W −1 depending on the liner/barrier layer used. Finite element method simulations show that such a high TBR can cause a temperature increase of hundreds of degrees in the future VLSI interconnect. Characterization of interface properties shows the significant importance of interdiffusion and adhesion in TBR. For future advanced interconnects, Ru is better than Co for heat dissipation in terms of TBR. This study provides a guideline for the thermal management in deeply scaled VLSI.

show abstract

“…The ratio of the reflected probe signal, recorded with a lock-in amplifier, was analyzed as a function of the pump delay time and fitted with a multilayer heat diffusion model, in which the thermal conductivity of the a-C:H film was treated as a fit parameter. The volumetric heat capacity of the films was calculated from a modified Kopp’s rule − utilizing the atomic concentration and densities of the films, which results in values ranging from 1.61 to 1.77 MJ m –3 K –1 . Additional details on the model parameters are provided in the Supporting Information.…”

mentioning

confidence: 99%

Thermal Conductivity Enhancement in Ion-Irradiated Hydrogenated Amorphous Carbon Films

et al. 2021

Self Cite

View full text Add to dashboard Cite

Amorphous solids are traditionally assumed to set the lower bound to the vibrational thermal conductivity of a material due to the high degree of structural disorder. Here, were demonstrate the ability to increase the thermal conductivity of amorphous solids through ion irradiation, in turn, altering the bonding network configuration. We report on the thermal conductivity of hydrogenated amorphous carbon implanted with C+ ions spanning fluences of 3 × 1014–8.6 × 1014 cm–2 and energies of 10–20 keV. Time-domain thermoreflectance measurements of the films’ thermal conductivities reveal significant enhancement, up to a factor of 3, depending upon the preirradiation composition. Films with higher initial hydrogen content provide the greatest increase, which is complemented by an increased stiffening and densification from the irradiation process. This enhancement in vibrational transport is unique when contrasted to crystalline materials, for which ion implantation is known to produce structural degradation and significantly reduced thermal conductivities.

show abstract

Thermal conductivity-structure-processing relationships for amorphous nano-porous organo-silicate thin films

Cited by 8 publications

References 122 publications

First-Principles Calculations to Investigate the Structural, Electronic, Optical, and Elastic Constants; Thermal Conductivity; Raman Scattering; Mulliken Population; and XPS Loss Features of Boron Nitride Polytypes

First-Principles Calculations to Investigate the Structural, Electronic, Optical, and Elastic Constants; Thermal Conductivity; Raman Scattering; Mulliken Population; and XPS Loss Features of Boron Nitride Polytypes

Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interlayer on Temperature Increase of Interconnects in Deeply Scaled VLSI

Thermal Conductivity Enhancement in Ion-Irradiated Hydrogenated Amorphous Carbon Films

Contact Info

Product

Resources

About