Si surface orientation dependence of SiC-dot formation in bulk-Si using hot-C+-ion implantation technique

Mizuno, Tomohisa; Aoki, Takashi; Sameshima, Toshiyuki

doi:10.1063/5.0077886

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…9,10) There have been many explorations towards photonic applications of SiC NCs and quantum dots (QDs). [11][12][13] They are biocompatible and suitable for biolabeling. 11,14,15) There is another route for expanding the photonic applications of SiC.…”

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confidence: 99%

Co-wide-bandgap conformally heteroepitaxial perovskite–monolithic SiC nanowire array with quantum-confined blue luminescence

Liang

Miao

et al. 2023

Appl. Phys. Express

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SiC is a wide-bandgap semiconductor with excellent mechanical and electrical properties and is a crucial template for epitaxially growing other semiconductors. We report the conformally epitaxial growth of the lead halide perovskites on the red-luminescent monolithic 6H-SiC nanowire arrays. The small lattice mismatch (0.8%) between SiC and CsPbBr3 ensures perfect heteroepitaxial growth of the CsPbBr3 quantum dots and nanosheets over the SiC nanowire arrays. The heteroepitaxial perovskites show intense multiband blue luminescence stemming from the strongly quantum confined excitons with twice prolonged lifetime compared with free nanocrystals. These blue-luminescent heteroepitaxial semiconductor–semiconductor nanostructures are promising nanophotonic device units.

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confidence: 99%

Co-wide-bandgap conformally heteroepitaxial perovskite–monolithic SiC nanowire array with quantum-confined blue luminescence

Liang

Miao

et al. 2023

Appl. Phys. Express

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Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Mizuno

Murakawa

Sameshima

2023

Journal of Applied Physics

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In this study, we developed very simple and ULSI (ultra large scale integration) compatible fabrication processes for group-IV (Si1 –xGe x and Si) semiconductor quantum dots (QDs) to apply hybrid ULSIs with photonic and electron devices, using double Ge+/Si+ hot-ion implantation into a SiO2 layer with larger bandgap EG and the post-furnace annealing. We successfully demonstrated the near-infrared (IR) photoluminescence (PL) from Si1 –xGe x-QDs. Transmission electron microscopy observations of single-crystallized Si1 –xGe x-QDs revealed that the diameter and the QD density were 3.6 ± 0.9 nm and (2.6 ± 0.4) × 1012 cm−2, respectively. In addition, Ge atoms were detected in the Si1 –xGe x-QDs by the energy dispersive x-ray spectroscopy analysis, and the Ge fraction of Si1– xGe x-QDs was varied from 0.06 to 0.26 by changing the Ge ion dose. The increase in the PL intensity by forming gas annealing was attributed to the dangling-bond reduction by the H-atom termination method. The PL spectrum of Si1 –xGe x-QDs was fitted by PL components of two QD structures containing Si1 –xGe x and Si materials. The PL intensity and PL-peak photon energy of Si1 –xGe x-QDs strongly depended on the Ge fraction. The Si1 –xGe x-QDs achieved the maximum PL intensity at x ≈ 0.13. High PL-peak photon energy (∼1.31 eV) of Si1 –xGe x-QDs is attributed to the quantum confinement effect of carriers in QDs. Consequently, group-IV semiconductor QDs including Si1 –xGe x, Si, SiC, and C, through the simple hot-ion implantation into the SiO2 layer, exhibited a wide range of PL emissions from the near-IR to ultraviolet regions.

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Fluorescent Silicon Carbide Quantum Dots

Hasanzadeh Azar,

Ji,

Jahanzamin

et al. 2024

Silicon Carbide - Materials, Devices and Emerging Applications [Working Title]

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Fluorescent silicon carbide quantum dots have recently attracted attention due to their long-term chemical and optical stability, non-toxicity, biocompatibility, and ultra-low cost. More highly developed III-V and II-V quantum dots lack this combination of positive attributes. We review recent progress in the synthesis protocols and applications of silicon carbide quantum dots together with their resulting optical properties that aim to overcome the well-known indirect bandgap exhibited by all known silicon carbide polytypes. These advancements are accomplished by new approaches to preparing ultrasmall quantum dots that achieve quantum confinement. In addition, surface modifications may be realized by a rapidly growing range of functional groups, conjugated molecules, and shells. Recent advancements in the modeling of fluorescent nanoscale quantum dots using density functional theory are enabling unprecedented insights into fluorescence mechanistics. The application of engineered silicon carbide quantum dots to a range of problems is reviewed. Key target sectors include energy, electronics, optoelectronics, biomedical cell imaging and biosensors.

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Si surface orientation dependence of SiC-dot formation in bulk-Si using hot-C+-ion implantation technique

Cited by 3 publications

References 23 publications

Co-wide-bandgap conformally heteroepitaxial perovskite–monolithic SiC nanowire array with quantum-confined blue luminescence

Co-wide-bandgap conformally heteroepitaxial perovskite–monolithic SiC nanowire array with quantum-confined blue luminescence

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Fluorescent Silicon Carbide Quantum Dots

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