Si–TiO2 interface evolution at prolonged annealing in low vacuum or N2O ambient

A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition

“…First, there is an ill-defined band at ϳ700 cm −1 that has been previously assigned to the formation of a non stoichiometric TiO x with x Ͻ 2 and special particle shapes. 46,49 Second, the observed slight shift in the 500 cm −1 band toward a smaller wavenumber in sample l is also related to changes in particle size effect. 39,46 Finally, we remark that the cleanliness of deposition method and analysis conditions are confirmed by the absence of bands associated with OH and uCH, uCH 2 groups in the 3200-3800 cm −1 , 2500-3600 cm −1 , and 1400-2900 cm −1 regions ͑not shown͒, respectively.…”

“…39,46 Finally, we remark that the cleanliness of deposition method and analysis conditions are confirmed by the absence of bands associated with OH and uCH, uCH 2 groups in the 3200-3800 cm −1 , 2500-3600 cm −1 , and 1400-2900 cm −1 regions ͑not shown͒, respectively. 49 XRD experiments probe deeper parts of the samples than XPS measurements. Indeed, the diffractograms show a fine control of the material structure by dosing the oxygen gas pressure bleeding into the chamber ͑Fig.…”

Effect of annealing and O2 pressure on structural and optical properties of pulsed laser deposited TiO2 thin films

“…765 cm −1 and 917 cm −1 were attributed to rutile phase of TiO 2 while peak at 990 cm −1 corresponds to TiO [21][22][23]. The peak at 1052 cm −1 was attributed to Ti-O bond stretching while broad peak centered around 1622 cm −1 is attributed to-OH bond stretching [23,24] responsible for hydrophilic nature of TiO 2 thin films. The decrease in -OH peak intensity at high temperatures of annealing is due to water desorption from TiO 2 films upon annealing.…”

Study of metal‐oxide‐semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer

“…Some authors report that the addition of nitrogen producing TiO x N y alloys leads to improved properties for some of the mentioned applications [10]. Thermal annealing of the Si substrate in ammonium (NH 3 ) environment before TiO 2 deposition and TiO 2 ozone (O 3 ) and N 2 O annealing are cited, it has been reported that these treatments minimize the interface chemical reactions besides reducing the leakage current by several orders of magnitude [11].…”