SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K

Tian, Ye; Hedayati, Raheleh

doi:10.1109/ted.2017.2730200

Cited by 12 publications

(7 citation statements)

References 25 publications

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“…A key enabler for WBG IC design is semiconductor device modeling for low-voltage devices. This is another emerging trend [47], [48]. The ability to design and manufacture wide bandgap integrated circuits as drivers, controllers, and protection circuitry allows them to be packaged in close proximity to the power device die to minimize parasitics that would adversely impact system performance.…”

Section: Discussionmentioning

confidence: 99%

Emerging Trends in Silicon Carbide Power Electronics Design

Mantooth¹

2017

CPSS TPEA

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Abstract-The emergence of wide bandgap power semiconductor devices has opened the possibilities of improved electrical performance and power density. Advanced research into wide bandgap power electronics also includes advances in integrated circuit design, semiconductor device modeling, 3D electronic packaging, and computer-aided design of wide bandgap based electronics. These emerging trends are described along with some early results indicating the additional improvements possible in power density. Operation at extreme temperatures also becomes more feasible.Index Terms-Gallium nitride, power integrated circuits, power semiconductor devices, power electronics, silicon carbide, wide bandgap semiconductors.

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Section: Discussionmentioning

confidence: 99%

Emerging Trends in Silicon Carbide Power Electronics Design

Mantooth¹

2017

CPSS TPEA

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“…The HT models corresponding to desired temperature points can be setup in Cadence by choosing the model libraries. VBIC models were developed with continuous temperature scalability over a wide temperature range [22] but were not used in this work.…”

Section: Gate Library (Gate Transistor Level Schematic Design)mentioning

confidence: 99%

Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications

et al. 2019

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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta ( β ) and collector current ( I C ) variation of SiC devices as temperature increases. The PDK-based complex digital ICs design flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications.

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“…The Spice Gummel-Poon model was used and optimized for selected DC parameters using the Integrated Circuit Characterization and Analysis Program. However, the temperature dependence in this model is not suitable for the wide temperature range used, and later work is based on the VBIC model implemented using Verilog-A, where not only the parameters but also the equations can be modified [35].…”

Section: Device Modelingmentioning

confidence: 99%

Bipolar integrated circuits in SiC for extreme environment operation

Zetterling

Hallén

Hedayati

et al. 2017

Semicond. Sci. Technol.

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Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

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SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K

Cited by 12 publications

References 25 publications

Emerging Trends in Silicon Carbide Power Electronics Design

Emerging Trends in Silicon Carbide Power Electronics Design

Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications

Bipolar integrated circuits in SiC for extreme environment operation

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