SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design

Kim, Jung Kyu; Ku, Kap Ryeol; Kim, Dong Jin; Kim, Sang Phil; Lee, Won Jae; Shin, Byoungchul; Lee, Geun Hyoung; Kim, Il Soo

doi:10.4028/www.scientific.net/msf.483-485.47

Cited by 5 publications

(3 citation statements)

References 6 publications

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“…In terms of the defect density such as micropipe and inclusion, SiC crystal boules grown with new crucible design structure using a guide tube composed of a graphite/tantalum foil double layer was superior to that of the normal structure using graphite material. [5] That is, the crystal quality of SiC crystal boules was significantly improved when Ta getters was used. The optical image of sliced SiC wafers exhibited defect densities as low as 20~30/cm 2 for SiC crystal boules.…”

Section: Resultsmentioning

confidence: 99%

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High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

Kim

Seo

et al. 2006

MSF

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SiC single crystal ingots grown by sublimation physical vapor transport (PVT) technique were prepared and then the SiC crystal quality with varying crucible design employing a guide tube and tantalum foil was systematically investigated. The growth rate of 2-inch SiC crystal grown by these crucible designs was about 0.3 mm/hr. The n-type and p-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated. The doping concentration level of below ~1017/cm3 was extracted from the absorption spectrum and Hall measurement. The densities of micropipes and inclusions in SiC crystal boules grown using the graphite/Ta foil double layer guide tube were significantly decreased. Finally we improved crystal quality through the introduction of new crucible design.

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Section: Resultsmentioning

confidence: 99%

“…In order to reduce time-consuming experiments, the modeling of SiC sublimation growth by Virtual Reactor was carried out. [4][5].…”

Section: Methodsmentioning

confidence: 99%

High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

Kim

Seo

et al. 2006

MSF

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“…SiC crystal growth has a natural habit of diameter expansion, so the expansion of crystal size has been the main direction in its industrialization in the past 30 years, from the initial crystalline grain to a centimeter-sized single crystal. Meanwhile, researchers and industry are moving from 5 cm, 7.5 cm, 10 cm and 15 cm to an 20 cm scale in recent years [ 13 , 14 ]. However, the enlargement of the crystal diameter is not a simple expansion by several times iterative growths.…”

Section: Introductionmentioning

confidence: 99%

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Zhang

Cai

et al. 2023

Materials

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As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

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Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method

Kim

Seo

et al. 2007

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We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport (PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth. Grown 2”-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about 1017/cm3 was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal grown with periodically modulated hydrogen addition definitely exhibited lower carrier concentration and lower micropipe density as well as reduced growth rate.

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SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design

Cited by 5 publications

References 6 publications

High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method

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