SiC epitaxy growth using chloride-based CVD

Henry, Anne; Beyer, Franziska Christine; Pedersen, Henrik; Kordina, Olof; Andersson, Sandra; Janzén, Erik

doi:10.1016/j.physb.2011.09.063

Cited by 18 publications

(11 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This decrease is similar to what has been observed for chlorinated SiC CVD. 22,23 After the growth rate increase, at the same position as the growth rate reaches its maximum, the growth also becomes epitaxial. This transition to epitaxial growth is such abrupt that the position for it is easily recognized.…”

Section: Resultsmentioning

confidence: 99%

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

et al. 2017

Self Cite

View full text Add to dashboard Cite

The use of chlorinated chemical vapor deposition (CVD) chemistry for growth of homoepitaxial layers of silicon carbide (SiC) has diminished the problem of homogenous gas phase nucleation, mainly the formation of Si droplets, in CVD of SiC by replacing Si-Si bonds with stronger Si-Cl bonds. Employing the even stronger Si-F bond could potentially lead to an even more efficient CVD chemistry, however, fluorinated chemistry is very poorly understood for SiC CVD. Here, we present studies of the poorly understood fluorinated CVD chemistry for homoepitaxial SiC layers using SiF4 as Si precursor. We use a combination of experimental growth studies, thermal equilibrium calculations of gas phase composition and quantum chemical computations (i.e. hybrid density functional theory) of the surface chemistry to probe the silicon chemistry in the CVD process. We show that while growth rates on the order of 35 µm/h can be achieved with a fluorinated chemistry, the deposition chemistry is very sensitive to the mass flows of the precursors and not as robust as the chlorinated CVD chemistry which routinely yields 100 µm/h over wide conditions. By using the position for the onset of epitaxial growth along the gas flow direction as a measurable, together with modeling, we conclude that SiF is the main Si growth species with SiHF as a minor Si species contributing to growth.

show abstract

Section: Resultsmentioning

confidence: 99%

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

“…Normally, the gases are forced through the rectangular opening using a quartz liner, which gives good utilization of the gases. 35 This type of reactor was a significant step forward in terms of producing high quality material. The material was of substantially better morphology, with a lower background doping, in the low 10 13 cm À3 range, and thicknesses greater than 50 lm could readily be grown.…”

Section: A Evolution Of Reactorsmentioning

confidence: 99%

Mechanisms of growth and defect properties of epitaxial SiC

Via

Camarda

Magna

2014

Applied Physics Reviews

109

View full text Add to dashboard Cite

“…Chloride-based chemistry has been shown to significantly improve the epitaxial growth rate to over 100 μm h À1 . [4][5][6][7][8] Using 4 offcut substrates, basal plane dislocations (BPDs) have shown to reduce to less than 0.1 cm À2 and similar improvements have been made regarding other epitaxial defects such as triangular defects, in-grown stacking faults (SFs), [9] and other intrinsic defects detrimental for high-power bipolar devices. [10][11][12][13][14] Considerable improvements in the on-axis homoepitaxy on the Si face of 100 mmdiameter wafers have also shown [15] to be an alternative route to obtain thick epilayers free of BPDs that are highly suitable for high-power bipolar devices.…”

Section: Introductionmentioning

confidence: 99%

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

Karhu

Ghezellou

Ul-Hassan

2022

Physica Status Solidi (b)

View full text Add to dashboard Cite

The origin and the formation mechanism of a surface morphological defect in 4H‐SiC epilayers are reported. The defect appears on the surface of an epilayer as an inclined line‐like feature at an angle of ±80° to the step‐flow direction . The defect is confirmed to originate from a threading screw dislocation intersecting the surface and its orientation is controlled by the sign of the Burgers vector of the dislocation. The defect forms through the interaction of local spiral growth associated with threading screw dislocations and step‐flow growth related to the substrate offcut. The defect mainly appears in the epilayers grown through chloride‐based chemistry, where in situ surface preparation of the substrate is performed in H2 + HCl at a relatively high temperature.

show abstract

SiC epitaxy growth using chloride-based CVD

Cited by 18 publications

References 23 publications

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

Mechanisms of growth and defect properties of epitaxial SiC

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

Contact Info

Product

Resources

About