SiC field-effect devices operating at high temperature

Ghosh, Ruby N.; Tobias, Peter S.

doi:10.1007/s11664-005-0108-3

Cited by 24 publications

(13 citation statements)

References 13 publications

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“…[9] To date, the wellknown memories with high operating temperatures are some inorganic memories (e.g., SiC and GaN) that can retain their switching behaviors over 300 8C. [10,11] Markedly, some high stable polymer-based memristor with working temperatures over 200 8C have been reported recently. [12] However, there is still a huge gap for real industrial application and most of the commercial electron devices cant work above 125 8C.…”

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confidence: 99%

Thermal‐Responsive Polyoxometalate–Metalloviologen Hybrid: Reversible Intermolecular Three‐Component Reaction and Temperature‐Regulated Resistive Switching Behaviors

et al. 2021

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The development of new-type memristors with special performance is of great interest. Herein, an inorganicorganic hybrid crystalline polyoxometalate (POM) with usual dynamic structures is reported and used as active material for fabricating memristor with unique temperature-regulated resistive switching behaviors. The hybrid POM not only exhibits tunable thermochromic properties, but also thermalinduced reversible aggregation and disaggregation reactions, leading to reversible structural transformations in SCSC fashion. Further, the memory device using the hybrid POM as active layer exhibits uncommon performance, which can keep resistive switching silent in the low temperature range of 30-150 8C, but show nonvolatile memory behavior in the high temperature range of 150-270 8C. Particularly, the silent and working states at three special temperatures (30, 150 and 270 8C) can be monitored by chromism. The correlation between structure and resistive switching property of the material has been discussed. The work demonstrates that crystalline inorganic-organic hybrid POMs are promising materials for making memristors with superior performance.Memristors are leading candidates for the next generation non-volatile memory devices owing to their low power consumption, high access speed, multi-state switching and device scalability. [1][2][3][4][5][6][7] The development of memristors with high performance and reliability under special/harsh environments is in great demand so that they can be applied in many promising fields, such as aerospace, geothermal, oil and gas industries. [8] In the past few decades, great efforts have been paid to improve the switching performance of memristors at high temperatures because the working mechanisms of memory devices, including filamentary conduction, space charge trapping, valence and conformation changes and

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confidence: 99%

Thermal‐Responsive Polyoxometalate–Metalloviologen Hybrid: Reversible Intermolecular Three‐Component Reaction and Temperature‐Regulated Resistive Switching Behaviors

et al. 2021

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“…To date, various materials and production methods have been used to produce hydrogen sensors able to withstand high temperatures [5][6][7][8][9][10]. The first study investigating a high-temperature hydrogen sensor using SiC as a substrate was performed in 1992 [11].…”

Section: Introductionmentioning

confidence: 99%

Effect of Palladium Electrode Patterns on Hydrogen Response Characteristics from a Sensor Based on Ta2O5 Film on SiC at High Temperatures

Choi

2019

Sensors

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Our study aims to fabricate a hydrogen sensor based on thermal stability analysis of Ta 2 O 5 film, and to determine the effect of Pd electrodes on the hydrogen sensor at high temperatures. First, in order to ensure high-temperature stability of silicon carbide (SiC)-based hydrogen sensors, the thermal stability of Ta 2 O 5 dielectric thin film at temperatures above 900 • C was studied. The sensor structure consisted of a metal-insulator-semiconductor (MIS) and a tantalum oxide (Ta 2 O 5 ) dielectric film was formed by rapid thermal oxidation (RTO). The Ta 2 O 5 film was assessed through SEM, TEM, SIMS, and dielectric breakdown strength to observe thermal stability. Secondly, hydrogen sensors using a SiC substrate were fabricated, with the process considering thermal stability. The response characteristics for hydrogen were evaluated using three types of sensors with different Pd electrode patterns. The patterns of the Pd electrode were designed as squares or grid shapes, and were characterized by 100%, 75%, and 50% area ratios of Pd electrodes covering the Ta 2 O 5 layer. The results showed that the sensor with a 100% area ratio of the Pd electrode had better sensitivity and linear response characteristics compared to sensors with a 50% area ratio of the Pd electrode.

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“…Single crystalline 4H-SiC is a desirable material for electronic devices and microelectromechanical devices operating in hostile environments such as high temperature, high pressure and corrosion due to its high thermal robustness, large Young's modulus, radiation and chemical hardness, etc. 4H-SiC electronic devices as high temperature sensors have been studied, such as pn diode [1,2], Schottky diode [3,4], FET [5,6], etc. The suspended microstructures in microelectromechanical devices also have great potential as the sensing element in resistance thermometer by monitoring the temperature-dependent resistance.…”

Section: Introductionmentioning

confidence: 99%

Stress and thermal characterization of 4H-SiC microelectromechanical structures

et al. 2017

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In this letter, the potential of single crystalline 4H-polytype silicon carbide (4H-SiC) based microelectromechanical structures as resistance thermometer for high temperature sensing were explored. A dopant-selective photoelectrochemical etching process was applied to release the sensing elementsuspended microstructures on 4H-SiC substrate. Residual stress and stress gradient in the microstructure before and after release was examined by micro-Raman spectroscopy. Electrical resistance of the suspended microstructures at different temperatures were characterized and analyzed by a temperaturedependent electron mobility model.

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SiC field-effect devices operating at high temperature

Cited by 24 publications

References 13 publications

Thermal‐Responsive Polyoxometalate–Metalloviologen Hybrid: Reversible Intermolecular Three‐Component Reaction and Temperature‐Regulated Resistive Switching Behaviors

Thermal‐Responsive Polyoxometalate–Metalloviologen Hybrid: Reversible Intermolecular Three‐Component Reaction and Temperature‐Regulated Resistive Switching Behaviors

Effect of Palladium Electrode Patterns on Hydrogen Response Characteristics from a Sensor Based on Ta2O5 Film on SiC at High Temperatures

Stress and thermal characterization of 4H-SiC microelectromechanical structures

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