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In this letter, the potential of single crystalline 4H-polytype silicon carbide (4H-SiC) based microelectromechanical structures as resistance thermometer for high temperature sensing were explored. A dopant-selective photoelectrochemical etching process was applied to release the sensing elementsuspended microstructures on 4H-SiC substrate. Residual stress and stress gradient in the microstructure before and after release was examined by micro-Raman spectroscopy. Electrical resistance of the suspended microstructures at different temperatures were characterized and analyzed by a temperaturedependent electron mobility model.