The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors

Juan, Pi-Chun; Jiang, Jheng-Yi; Shih, Wei-Kuan; Lee, J. Y. M.

doi:10.1016/j.mee.2007.04.004

Cited by 7 publications

(3 citation statements)

References 9 publications

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“…This kind of shift is widely reported for different kind of ferroelectric materials (Bozgeyik et al 2010;Juan et al 2007). Furthermore, the sharp change in the capacitance at the accumulation and inversion region indicates that the interfaces of the junction are good.…”

Section: Methodssupporting

confidence: 65%

Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

2011

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The effect of the chemical composition of the ferroelectric barium strontium titanate (BST) on the memory window behavior of Al/BST/SiO 2 /Si-gate-field effect transistor structure has been investigated. Nanocrystalline Ba x Sr 1-x TiO 3 thin films with different x values have been fabricated as metal-ferroelectric-insulator-semiconductor (MFIS) and metal-ferroelectric-metal (MFM) configurations using a sol-gel technique. The variation of the dielectric constant (e) and tan d with frequency for MFM samples have been studied to ensure the dielectric quality of the material. At low frequencies, e increases as the strontium content decreases, whereas at high frequencies, it shows the opposite variation, which is attributed to the dipole dynamics. The ferroelectricity of the BST within MFM structure has been investigated using C-V characteristics, which show that the ferroelectric hysteresis strength increases as the strontium content decreases. The ferroelectric memory behavior of the MFIS samples has been investigated using C-V characteristics. The results show that the memory window width increases as the strontium content decreases; this is attributed to the grain size and dipole dynamics effect.

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Section: Methodssupporting

confidence: 65%

Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

2011

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“…Most previous studies about hydrogen impurities in ferroelectric materials are from experiments [21][22][23]. There are a few computational works based on density functional theory (DFT) calculations, but the system sizes were limited [24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Numerical simulations of hydrogen interstitial diffusion and ferroelectricity degradation in lead titanate films

You¹,

Zhu²,

Gray³

et al. 2021

J. Phys. D: Appl. Phys.

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Numerical simulations have been performed to study hydrogen interstitial diffusion and ferroelectric degradation in lead titanate films. The computational method consists of two parts: hydrogen diffusion property calculations using density functional theory (DFT) and ferroelectric property calculations using molecular dynamics (MD) simulations. The hydrogen interstitial diffusion path and the activation energy have been obtained using DFT calculations. With the obtained diffusion properties, the distributions of hydrogen impurities have been calculated using Fick’s second law and used as input to MD simulations, with various diffusion times and hydrogen surface concentrations. It has been found that magnitudes of remnant polarization and coercive electric fields decrease with increasing the diffusion time and the hydrogen surface concentration. The distribution of hydrogen impurities is another critical factor to ferroelectric responses. Compared to a uniform distribution of hydrogen impurities, the nonuniform distribution diminishes the ferroelectric properties more severely. A heavily defective region due to the nonuniform hydrogen distribution reduces the effective film thickness and induces the in-plane ferroelectric domain formations.

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“…In this particular study, lead zirconate titanate (PZT) mixed homogenous multicomponent binder is used as powder-polymer composite for CIM of microarray. PZT microarrays have been previously established with numerous applications such as nonvolatile memory devices because for their commendable ferroelectric properties; and as sensors in actuators in microelectromechanical systems (MEMS) due to its piezoelectric properties [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Material properties design using simulations and experiments for powder injection molding of lead zirconate titanate (PZT).

Bandiwadekar¹

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I would also like to thank my mentor Dr. Sundar Atre, for identifying my talent and capabilities in research and making me part of his guild, Materials Innovation Guild. As an expert himself in the field of my research, he offered me several opportunities to interact with the industry and making me part of various training programs. He always pushed me to present my research in front of an audience, be it in front of my lab mates, industry people or at a conference. His constructive critisim on my research interpretations has always lead me to work smarter and present my ideas better. My research lab, Materials Innovation Guild, is nothing less than a corporate research centre. Each individual has her/his own expertise which makes the research group more versatile and innovative. I would like to thank my collegues, especially Harish Irrinki, Subrata Debnath, Nirupama Warrier and Paramjoth Singh to name a few, who have always been kind, helpful and supportive throughout the research. I would also like to thank our v collaborators from Pohang University of Science and Technology, South Korea for their support and guidance. Researchers are sometimes told, "Get a life!", and I have one, thanks to my friends Juili, Muddasir, Sonali and many more from my circle of friends for their goodwill, support and guidance through numerous tough decisions. With ambitions soaring high, I relied on them to strike a balance between work and leisure. Last but not the least, I would like to thank my parents, Pramod A. Bandiwadekar and Pradnya P. Bandiwadekar, firstly, for bringing me into this world and instilling courage and confidence in me and secondly, for supporting my endeavors and trusting my steps towards a fulfilling career.

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The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors

Cited by 7 publications

References 9 publications

Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure

Numerical simulations of hydrogen interstitial diffusion and ferroelectricity degradation in lead titanate films

Material properties design using simulations and experiments for powder injection molding of lead zirconate titanate (PZT).

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