SiC formation by C60 molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process

Abstract

Articles you may be interested inPhotoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Structural and optical investigation of plasma deposited silicon carbon alloys: Insights on Si-C bond configuration using spectroscopic ellipsometry Formation of SiC upon annealing an atomically clean Si͑001͒-2 ϫ 1 surface covered with half a monolayer of C 60 molecules has been investigated by a synchrotron-radiation photoemission. C 60 molecules are chemisorbed at room temperature on the silicon surface via Si-C 60 hybridization to form covalent bonds. During annealing of the film at 700°C, Si atoms in the first layer below the surface move upward to bond with C 60 molecules, enhancing the formation of Si x C 60 and resulting in weakened C-C bonds within C 60 molecules. Upon further annealing to 750°C, most C 60 molecules decompose and formation of the SiC film begins. Total decomposition of C 60 molecules occurs at 800°C, and only a SiC film is then found.