SiC Nano-Dots in Bulk-Si SubstrateFabricated by Hot-C⁺-Ion Implantation Technique

SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique

“…32,33) X-ray photoelectron spectroscopy (XPS) showed Si-C bond in hot- 12 C + -ion implanted Si layer, which is the direct verification of SiC formation in Si layer. [32][33][34][35] As a result, we confirmed that the PL intensity increases with increasing D C . The self-cluster effects of ion-implanted C atoms in a crystal-Si (c-Si) layer, 34,35) analyzed by atom probe tomography, [35][36][37] leads to the local condensation of C-atoms with the size of several nm both at the oxide/Si interface and in c-Si layer.…”

“…[32][33][34][35] As a result, we confirmed that the PL intensity increases with increasing D C . The self-cluster effects of ion-implanted C atoms in a crystal-Si (c-Si) layer, 34,35) analyzed by atom probe tomography, [35][36][37] leads to the local condensation of C-atoms with the size of several nm both at the oxide/Si interface and in c-Si layer. This is the physical mechanism for the local formation of SiC nano-dots in Si areas.…”

“…33) Moreover, the partial formation of cubic (3C-SiC) and hexagonal SiC (H-SiC) nano-dots were also confirmed both at oxide/Si interface and in the Si layer, using corrector-spherical aberration transmission electron microscopy (CSTEM), high-angle annulardark-field (HAADF) scanning transmission electron microscope (STEM), and electron diffraction patterns that were obtained by fast Fourier transform analysis of the lattice spots of CSTEM data. 34,35) We also demonstrated very large E PH (≈3 eV) and very strong PL intensities (I PL ) from the near-UV to visible regions (>350 nm) of SiC dots, which markedly increase with increasing the C content in Si layer. For example, the PL emission from SiC dots is about 100 times stronger than that from 2D-Si.…”

“…This is the physical mechanism for the local formation of SiC nano-dots in Si areas. [32][33][34][35] The hot-C + -ion implantation process can reduce the ion implantation-induced damage of the Si layer, which is the advantageous characteristics of hot-C + -ion implantation process. 33) Moreover, the partial formation of cubic (3C-SiC) and hexagonal SiC (H-SiC) nano-dots were also confirmed both at oxide/Si interface and in the Si layer, using corrector-spherical aberration transmission electron microscopy (CSTEM), high-angle annulardark-field (HAADF) scanning transmission electron microscope (STEM), and electron diffraction patterns that were obtained by fast Fourier transform analysis of the lattice spots of CSTEM data.…”

SiC nanodot formation in amorphous-Si and poly-Si substrates using a hot-C+-ion implantation technique

“…9) Thus, we have experimentally studied the enhanced PL efficiency of the Si 1-Y C Y layer and SiC dots with higher E G fabricated by a simple hot- 12 C + -ion implantation into a (100) silicon-on-insulator (SOI) or bulk-Si substrate. [16][17][18][19][20] It is also reported that 3D-SiC can emit the PL photons by many recombination processes, such as, free exciton recombination, 21) except band-to-band recombination, although 3D-SiC has an indirect-bandgap structure. 22,23) According to the self-cluster effects of ion implanted C atoms in a crystal-Si (c-Si) layer 19,24) analyzed by atom probe tomography, the C content with the C cluster size of several nm locally condenses both in the Si substrate and at the oxide/Si interface, which leads to the local formation of SiC dots in c-Si.…”