SiC Substrate effects on electron transport in the epitaxial graphene layer

Abstract

Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one highmobility carrier (3493 cm 2 /Vs at 300 K) and one low-mobility carrier (1115 cm 2 /Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.

Value-added Synthesis of Graphene: Recycling Industrial Carbon Waste into Electrodes for High-Performance Electronic Devices

“…Graphene is a two-dimensional monolayer of carbon atoms that has outstanding mechanical, chemical and electrical properties 1 2 3 4 5 6 . To exploit these properties, various graphene synthesis methods have been suggested 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 since it was first detached from graphite by mechanical exfoliation 6 . Among existing methods to obtain large, high-quality graphene layers, epitaxial approaches use substrates such as SiC to guide direct growth of graphene 7 8 9 10 .…”

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

“…On the other hand, the μ H of carriers in the SLG/SiO 2 /Si sample was measured as 1323 cm 2 /Vs at 260 K, and its value increases monotonically with decreasing temperature from 260 to 1.8 K. At 1.8 K, the Hall mobility value reaches 1668 cm 2 /vs. This behaviour reflects the 2D character of the carriers in the single-layer graphene [16,18].…”

“…The temperature dependent behaviour of the Hall mobility (μ H ) and the sheet carrier density (N s ) of carriers was determined from the measured R xx and R xy using equation [16,18] where w and L are the width and length of the Hall bar, e is the electronic charge and B is the applied magnetic field. μ H and N s were determined under a static magnetic field of 1.0 T and temperature between the 1.8 and 260 K. The temperature dependence of the μ H and N s in the SLG/SiO 2 /Si sample is given in Figure 3.…”

“…The transport properties of graphene were studied both theoretically [9][10][11] and experimentally [12][13][14][15][16][17][18][19]. Tıraş et al [16] published Shubnikov-de Haas (SdH) measurement results for single-layer graphene on a SiC substrate.…”

Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C- and Si- faces of SiC

“…43,44 Ohmic contacts were incorporated with the reverse lithography technique. After development, 20 nm titanium and 100 nm gold layers were deposited with an e-beam evaporator, followed with the standard lift-off process.…”