Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Appl. Phys. Lett. 102, 123106 (2013) Temperature dependent thermal conductivity of a free-standing graphene nanoribbon Appl. Phys. Lett. 102, 111911 (2013) Directional quantum transport in graphyne p-n junction J. Appl. Phys. 113, 073710 (2013) Charge transport in lightly reduced graphene oxide: A transport energy perspective J. Appl. Phys. 113, 063710 (2013) Effect of chiral property on hot phonon distribution and energy loss rate due to surface polar phonons in a bilayer graphene J. Appl. Phys. 113, 063705 (2013) Additional information on J. Appl. Phys. Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m À1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (T e ) of hot electrons was obtained from the lattice temperature (T L ) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.

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Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one highmobility carrier (3493 cm 2 /Vs at 300 K) and one low-mobility carrier (1115 cm 2 /Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.

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We report the effect of a thin GaN (2 nm) interlayer on the magnetotransport properties of AlInN/AlN/GaN-based heterostructures. Two samples were prepared (Sample A: AlInN/AlN/ GaN and sample B: AlInN/GaN/AlN/GaN). Van der Pauw and Hall measurements were performed in the 1.9-300 K temperature range. While the Hall mobilities were similar at room temperature (RT), sample B had nearly twice as large Hall mobility as sample A at the lowest temperature; 679 and 889 cm 2 /Vs at RT and 1460 and 3082 cm 2 /Vs at 1.9 K for samples A and B. At 1.9-10 K, the longitudinal magnetoresistance was measured up to 9 T, in turn revealing Shubnikov-de Haas (SdH) oscillations. The carrier concentration, effective mass and quantum mobility of the twodimensional electron gas (2DEG) were determined from SdH oscillations. At 1.9 K, the 2DEG concentration of sample B was nearly seven times larger than of sample A (1.67 Â 10 13 /cm 2 vs. 0.24 Â 10 13 /cm 2 ). On the contrary, the quantum mobility was changed adversely nearly three times (sample B 2500 cm 2 /Vs and sample A 970 cm 2 /Vs). The increase of the 2DEG concentration was attributed to the existence of the GaN interlayer, which has strengthened the spontaneous polarization difference between the AlInN and GaN layers of the heterostructure. Hence, the stronger electric field at the 2DEG region bent the conduction band profile downwards and consequently the quantum mobility decreased due to the increased interface roughness scattering.