SiCN alloys deposited by electron cyclotron resonance plasma chemical vapor deposition

Gomez, FJ; Prieto, P.; Elizalde, E.; Piqueras, J.

doi:10.1063/1.117887

Cited by 103 publications

(44 citation statements)

References 18 publications

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“…En la figura 3a se representan, por una parte, los espectros de dos muestras, depositadas con distinto flujo de nitrógeno (40 y 30 sccm de N 2 respectivamente) e idéntico flujo de CH 4 . El espectro inferior corresponde a una muestra obtenida con razón de flujos CH 4 :N 2 similar a la segunda y, adicionalmente, 10 sccm de argón.…”

Section: Espectroscopía Ftirunclassified

“…El espectro inferior corresponde a una muestra obtenida con razón de flujos CH 4 :N 2 similar a la segunda y, adicionalmente, 10 sccm de argón. En la figura 3b se muestran los espectros de tres muestras obtenidas en procesos con flujos de CH 4 de 80, 100 y 120 sccm, siendo la temperatura del proceso 500°C en la de menor flujo.…”

Section: Espectroscopía Ftirunclassified

“…Esto parece indicar que una mayor activación térmica compensa la menor concentración de CH 4 , o bien que al aumentar ésta se favorecen reacciones exotérmicas que compensan la diferencia de temperatura.…”

Section: Espectroscopía Ftirunclassified

“…Estudios recientes han mostrado que la generación de plasmas de SiH 4 , CH 4 y N 2 en depósitos ECR-CVD, permite obtener películas amorfas de composición variable, Si x C y N (4). En primer lugar se ha estudiado el mecanismo por el cuál la presencia de silano parece favorecer la incorporación de especies de C y N.…”

Section: Introductionunclassified

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Películas amorfas de SixCyN depositadas mediante ECR-PECVD

Barbadillo¹,

Hernández²,

Cervera³

et al. 2000

Bol. Soc. Esp. Ceram. Vidr.

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Se han realizado procesos de plasma de resonancia ciclotrón electrónica (ECR) con diferentes activadores y diluyentes gaseosos para obtener películas con carbono y nitrógeno a bajas temperaturas. En todos los casos se emplearon metano y nitrógeno como precursores de especies de C y N. La caracterización de las muestras se realizó mediante espectroscopía de infrarrojos por transformada de Fourier y elipsometría espectroscópica. Las medidas de espectroscopía de infrarrojos muestran que la presencia de pequeñas cantidades de silano en el plasma altera sustancialmente la composición de las películas, mientras que la adición de hidrógeno no tiene efectos apreciables en la formación de las mismas. Por otra parte, la utilización de argón o neón como diluyentes de los precursores gaseosos está estrechamente relacionada con el grado de activación de las moléculas de metano, según se observa en los espectros de emisión óptica registrados en cada proceso. La aplicación de campos de radiofrecuencia durante los depósitos únicamente varía las velocidades de crecimiento. Palabras clave: SiCN, ECR-PECVD, OES, FTIR, elipsometría espectroscópica. Amorphous Si x C y N layers prepared from electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD).ECR-PECVD processes with several activators and diluent gases were performed to obtain films with carbon and nitrogen at low temperatures. In all cases methane and nitrogen were used as precursors of C and N species. The characterization of the samples was done using Fourier transform infrared spectroscopy (FTIR) and spectroscopic ellipsometry. The FTIR measurements show that the presence of little amounts of silane in the plasma substantially alters the composition of the films, while the addition of hydrogen has no appreciable effects in their formation. Moreover, the use of argon or neon as diluent of the gas precursors is closely related to the degree of activation of the methane molecule, as observed in the optical emission spectra recorded in every process. The application of rf fields during depositions only changes the growth rates.Key words: SiCN, ECR-PECVD, OES, FTIR, spectroscopic ellipsometry. INTRODUCCIÓN.A partir de los estudios teóricos llevados a cabo por Liu y Cohen (1) que predicen, para el nitruro de carbono en su fase β-C 3 N 4 , propiedades de dureza y conductividad térmica comparables a las del diamante, se está realizando un gran esfuerzo tecnológico para sintetizar películas de nitrógeno y carbono (CN x ). Los intentos se han llevado a cabo mediante diversas técnicas de depósito químico en fase vapor (CVD) (2), sin embargo, a pesar de los numerosos trabajos publicados al respecto en los últimos años hasta el momento no se tienen evidencias claras de que la síntesis de β-C 3 N 4 monocristalino sea posible y se desconocen, por el momento, las condiciones necesarias para ello.En este trabajo se buscan procesos alternativos a baja temperatura, que permitan incorporar simultáneamente carbono y nitrógeno en las películas, mediante el empleo de pla...

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Section: Espectroscopía Ftirunclassified

Section: Introductionunclassified

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Películas amorfas de SixCyN depositadas mediante ECR-PECVD

Barbadillo¹,

Hernández²,

Cervera³

et al. 2000

Bol. Soc. Esp. Ceram. Vidr.

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“…Surface morphology and roughness has been investigated by atomic force microscopy. 18 The optical properties of SiCN suggest the behavior as a wide-bandgap semiconductor in the case of the crystalline phase, with potential applications for blue or ultraviolet optoelectronic devices.6,15 The variety of silicon carbonitride compositions obtained with any of these techniques allows one to think of these materials as tunable bandgap ones for applications in flat panel displays. Furthermore, SiCN nanorods exhibit promising characteristics as field emitters.…”

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confidence: 99%

Hydrogen-free SiCN Films Obtained by Electron Cyclotron Resonance Plasma

Hernández

Cervera

Piqueras

et al. 2007

J. Electrochem. Soc.

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Electron cyclotron resonance plasma enhanced chemical vapor deposition of hydrogen-free SiCN films has been studied. Infrared and Raman spectroscopies were used for chemical characterization of deposited films, showing Si-N, Si-C, Si-Si, and C-N bonds in composition. Optical responses of the films between 1.5 and 4.5 eV were obtained by spectroscopic ellipsometry. Cathodoluminescence of the films shows mainly a broad band of emission at around 2.3 eV together with overlapped contributions at higher energies depending on the composition. Surface morphology and roughness has been investigated by atomic force microscopy. 18 The optical properties of SiCN suggest the behavior as a wide-bandgap semiconductor in the case of the crystalline phase, with potential applications for blue or ultraviolet optoelectronic devices.6,15 The variety of silicon carbonitride compositions obtained with any of these techniques allows one to think of these materials as tunable bandgap ones for applications in flat panel displays. Furthermore, SiCN nanorods exhibit promising characteristics as field emitters. 9,19More recently, with the introduction of new synthesis methods, other innovative applications have been described for this family of compounds, such as its feasibility in the fabrication of microelectrical mechanical systems ͑MEMS͒ working in high-temperature environments. 20,21 With the continuous shrinking size in integrated circuits technology there is a continuous effort in the search for materials with low dielectric constant for metal layer isolation. Further, due to its low dielectric constant, hydrogenated silicon carbonitrides prevent Cu diffusion in between the metallization layers. 22 The hydrogen incorporation in amorphous SiCN films results in a degradation of the mechanical properties of these films. 8In this work, we report the synthesis of amorphous hydrogen-free SiCN films by electron cyclotron resonance plasma at 850°C. Their composition and bonding structure have been studied by Fourier transform infrared ͑FTIR͒ and Raman spectroscopy. The surface morphology has also been studied by atomic force microscopy. The dielectric constant for different layer compositions has been obtained by spectroscopic ellipsometry and their potential optoelectronic applications explored by cathodoluminescence measurements. ExperimentalSiCN films were deposited on float zone ͑FZ͒ silicon wafers, polished on both sides, at 850°C in an electron cyclotron resonance plasma ͑ECR͒ reactor. The substrate holder was radiatively heated with a tungsten filament lamp and the temperature, 850°C, monitored with a pyrometer across a quartz window. The base pressure of the system was 10 −7 Torr. Low oxygen content FZ silicon wafers with a resistivity higher than 100 ⍀ cm were used as substrates. Before deposition, silicon substrates were chemically etched with a HF buffer solution. Gas mixtures of Ar, CH 4 , N 2 , and SiH 4 were employed in the deposition processes; the precursor gas flows were controlled by mass flow meters in such a way that a...

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