SiGe based Ka-band reflection type phase shifter for integrated phased array transceivers

Mazor, N.; Katz, Oded; Ben-Yishay, Roee; Liu, D.; Garcia, Alberto Valdes; Elad, Danny

doi:10.1109/mwsym.2016.7539968

Cited by 16 publications

(10 citation statements)

References 8 publications

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“…In this case, a quadrature signal is generated and recombined with the in‐phase signal after both components pass through attenuation stages . A similar effect is achieved also for reflective type PS where a varactor diode is generally employed to achieve a phase‐only control . More recently, hybrid configurations based on reconfigurable transmission lines (TL) have been also proposed .…”

Section: Introductionmentioning

confidence: 82%

A SiGe BiCMOS phase shifter based on quarter‐wave coupled resonators

Calzona

Boccia

Arnieri

et al. 2019

Int J RF Microw Comput Aided Eng

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This work presents the first example of monolithically integrated phase shifter based on a pass‐band filter architecture. The proposed configuration was realized mapping a classical quarter‐wave coupled filter circuit into its lumped element equivalent. Phase control is achieved by controlling the pass‐band through tunable tanks employing varactor diodes. A demonstrator was prototyped in the 24 GHz ISM band using a 0.25μm SiGe BiCMOS technology. Experimental results show 180° of phase range and maximum transmission losses of 8 dB. The main feature of this configuration is that it allows controlling the transmission losses by design and that its size is extremely compact.

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Section: Introductionmentioning

confidence: 82%

A SiGe BiCMOS phase shifter based on quarter‐wave coupled resonators

Calzona

Boccia

Arnieri

et al. 2019

Int J RF Microw Comput Aided Eng

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“…quadrature coupler and reflective load. Quadrature couplers are implemented with the help of lumped-elements [2] or transmission line (TL) based structures [1], [3]- [5]. TL-based couplers are implemented by using either the vertical or edge coupling between two coupled lines.…”

Section: Introductionmentioning

confidence: 99%

“…TL-based couplers are implemented by using either the vertical or edge coupling between two coupled lines. Vertical or lateral coupling is useful for differential implementation of the coupler design [1] [2] [3]. Differential RTPS proposed in [3] and [4] are based on vertically-coupled strip lines couplers, however, they consume larger chip area.…”

Section: Introductionmentioning

confidence: 99%

“…Vertical or lateral coupling is useful for differential implementation of the coupler design [1] [2] [3]. Differential RTPS proposed in [3] and [4] are based on vertically-coupled strip lines couplers, however, they consume larger chip area. Grounded microstrip line-based couplers offer the opportunity to use the surrounding area efficiently with minimum effect of unwanted coupling from surrounding structures of the RTPS, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…Designed coupler and RTPS structures are bidirectional and can be used in receivers and transmitters. The proposed RTPS is smaller in area than the recently published state-of-the-art works [3] [4]. Section II describes the design of the proposed coupler and the reflection load.…”

Section: Introductionmentioning

confidence: 99%

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A Differential Reflection-Type Phase Shifter Based on CPW Coupled-Line Coupler in 45nm CMOS SOI

Shaheen

Akbar

Rahkonen

et al. 2019

2019 16th International Symposium on Wireless Communication Systems (ISWCS)

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This paper presents a mm-wave fully differential coplanar waveguide (CPW) vertically-coupled lines coupler and a reflection type phase shifter (RTPS) based on the proposed coupler. The use of grounded strip line structure for vertical coupling in CPW based coupler provides not only the improved coupling properties than the edge coupling but also provides the opportunity of using surrounding area efficiently to reduce area. The proposed coupler and phase shifter are designed and fabricated in 45nm CMOS SOI technology. Measured insertion loss of the coupler is ~ 6 dB from 18 to 43 GHz. A digitally controlled parallel LC load is used for controlling the phase of the phase shifter. Measured phase tuning range is 115 degrees, with insertion loss variation of 4.5 to 9 dB, for a frequency range of 39 GHz to 45 GHz. Total drawn area of the phase shifter is 0.214 mm 2. The area of the proposed RTPS is smaller than the recently published state-of-the-art structures.

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Silicon Millimeter‐wave Phased Arrays

Lee,

Sadhu

2024

Encyclopedia of RF and Microwave Engineering

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Millimeter‐wave technology, with its large available bandwidth, promises many new wireless applications, from cellular communications to automotive radar for self‐driving vehicles. The silicon integration of mmWave and phased array technology has opened the door for large‐scale deployment of such systems. This chapter provides an overview tutorial of silicon‐based millimeter‐wave phased arrays and key building blocks.

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SiGe based Ka-band reflection type phase shifter for integrated phased array transceivers

Cited by 16 publications

References 8 publications

A SiGe BiCMOS phase shifter based on quarter‐wave coupled resonators

A SiGe BiCMOS phase shifter based on quarter‐wave coupled resonators

A Differential Reflection-Type Phase Shifter Based on CPW Coupled-Line Coupler in 45nm CMOS SOI

Silicon Millimeter‐wave Phased Arrays

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