Proceedings of the 27th Symposium on Integrated Circuits and Systems Design 2014
DOI: 10.1145/2660540.2660996
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SiGe HBT mm-Wave DC Coupled Ultra-wide-band Low Noise Monolithic Amplifiers

Abstract: Design guide lines are given for developing SiGe HBT mm-wave d.c. coupled ultra-wide-band low noise monolithic amplifiers. An ultra wide band LNA and two mm-wave TIAs for 40 Gbps and 100 Gbps applications are proposed. The LNA has S 21 =11 dB and a 3-dB bandwidth of 88 GHz. The 40 Gbps TIA has a new topology, allowing a DC coupled performance, 54 dBΩ transimpedance gain, 37 GHz bandwidth, consumes 59 mW power and its area is 0.23 mm 2 . The 100 Gbps TIA has 43 dBΩ transimpedance gain, 79.4 GHz bandwidth, consu… Show more

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Cited by 3 publications
(2 citation statements)
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“…The proposed topology is a double cascode TIA with negative shunt-shunt feedback and inductive peaking techniques, optimized for very low noise performance [14][15][16][17]. Fig.…”
Section: The Proposed Circuit and Design Methodologymentioning
confidence: 99%
See 1 more Smart Citation
“…The proposed topology is a double cascode TIA with negative shunt-shunt feedback and inductive peaking techniques, optimized for very low noise performance [14][15][16][17]. Fig.…”
Section: The Proposed Circuit and Design Methodologymentioning
confidence: 99%
“…The Noise performance of transimpedance amplifiers is evaluated by the input referred noise current normalized in the passband [15][16][17]. The noise generators in transimpedance amplifiers are modeled by current sources because the input signal is also given by a current source (i PD ).…”
Section: Noise Analysismentioning
confidence: 99%