SiGe HBT Technology for RF and Wireless Applications

Niu, Guofu

doi:10.1016/b978-075067695-3/50017-3

Cited by 1 publication

(2 citation statements)

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“…R C is the collector resistance, V t is the thermal voltage, and t scl, t em and t qbe are the delay terms associated with the base-collector space-charge layer, charge in the emitter and free carrier charge in the emitter-base space-charge layer, respectively. The high-frequency minimum noise value NF MIN of a bipolar transistor is given as [10,11],…”

Section: Theory and Simulation Methodologymentioning

confidence: 99%

“…The contribution of the second and third term in the brackets of equation (11) contributes in the electric field E(x) due to the gradient of the base doping and non-uniform band-gap narrowing effect, respectively. However, at high injection levels the field variation in the base due to minority carrier concentration gradient (first term in the brackets) is the dominant component of the electric field in the base.…”

Section: Theory and Simulation Methodologymentioning

confidence: 99%

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A study of the effects of the base doping profile on SiGe heterojunction bipolar transistor performance for all levels of injection

Khanduri¹,

Panwar²

2006

Semicond. Sci. Technol.

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The effects of two different base doping profiles on the current gain and cut-off frequency for all levels of current injection have been studied for NPN Si/SiGe/Si double heterojunction bipolar transistors (SiGe DHBTs). The two-dimensional simulation results for a SiGe DHBT with uniform base doping and a fixed base Gummel number are compared with a non-uniform base doping profile SiGe drift-DHBT device. The study explains the performance of SiGe HBTs at different injection levels by analysing the electron and hole mobility, drift velocity, electric field, junction capacitances and intrinsic and extrinsic base region conductivities. The base doping profile in the SiGe drift-DHBT is controlled in such a way that it creates a net accelerating drift field in the quasi-neutral base for minority electrons. This accelerating field subsequently improves the current gain and cut-off frequency for the SiGe drift-DHBT in comparison with the SiGe DHBT for all levels of injection.

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Section: Theory and Simulation Methodologymentioning

confidence: 99%

Section: Theory and Simulation Methodologymentioning

confidence: 99%