SiGe-HBTs with high
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              f
              <sub>T</sub>
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            at moderatecurrentdensities

Schüppen, A.; Gruhle, A.; Kibbel, H.; Erben, U.; König, U.

doi:10.1049/el:19940774

Cited by 77 publications

(16 citation statements)

References 3 publications

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“…There is a high demand for Si/SiGe hetro-junction bipolar transistors (HBTs) in the area of Si-based microwave MMICs due to their superior high-frequency performance [1]. For the design of nonlinear circuits such as oscillators and power amplifiers, a nonlinear model needs to be developed.…”

Section: Introductionmentioning

confidence: 99%

Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

Taher

Schreurs

Nauwelaers

2005

Int J RF and Microwave Comp Aid Eng

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In this article, we demonstrate how the constitutive relations for the nonlinear modeling of hetro-junction bipolar transistors (HBTs) can be based on an artificial neural network (ANN) model representation.. The model is implemented using a commercial microwave simulator, and has been validated by DC and nonlinear measurements. Excellent agreement is obtained as compared with the results of the DC measurements, and the model predicts well the higher-order harmonics in a single tone test.

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Section: Introductionmentioning

confidence: 99%

Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

Taher

Schreurs

Nauwelaers

2005

Int J RF and Microwave Comp Aid Eng

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“…If the Si base is replaced by a SiGe base, the collector current expression (1) becomes (SiGe) (4) where is the bandgap narrowing in the base due to the presence of the germanium. There is little data in the literature concerning the effective density of states and the carrier mobilities in SiGe.…”

Section: The Analysis Methodsmentioning

confidence: 99%

“…Thanks to the heterojunction effect, thin, heavily doped base can be used to reduce the transit time in the base without compromising the base resistance or the emitter injection efficiency [1], [2]. Over the last ten years, SiGe technology and heterojunction bipolar transistor (HBT) design has progressed considerably, and has reached the point of record cut-off frequencies above 100 GHz [3], [4] and record ECL gate delays down to 11 ps [5], [6].…”

Section: Introductionmentioning

confidence: 99%

Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology

Tron

Hashim

Ashburn

et al. 1997

IEEE Trans. Electron Devices

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Abstract-This paper describes a method for characterizing the bandgap narrowing and parasitic energy barrier in SiGe heterojunction bipolar transistors (HBT's), fabricated using a singlepolysilicon self-aligned bipolar process. From a comprehensive study of the temperature dependence of the collector current, the bandgap narrowing in the base due to germanium has been dissociated from that due to the heavy dopant concentration. The same approach has been used to characterize the height and width of parasitic energy barriers which appear when boron out-diffusion from the SiGe base is present. The method has been applied to SiGe heterojunction bipolar transistors fabricated using a single polysilicon, self aligned, bipolar process, as well as mesa transistors. The experimental results show that small geometry transistors have degraded collector currents due to boron out-diffusion around the perimeter of the emitter. This behavior has been explained by accelerated boron diffusion due to point defect generated during the extrinsic base implant. The values of undoped SiGe spacer thickness needed to suppress the parasitic energy barrier are described. Finally, high-frequency results are reported, which correlate the frequency transition to these parasitic energy barriers.

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“…In particular, SiGe-HBTs have the potential for both low power low noise front ends and high frequency power amplifiers up to 20 GHz. The increasing interest in SiGe-HBTs is a result of their excellent radio frequency (RF) performance with recently reported fT and fmax values up to 120 GHz [1,2,3], noise figures of 0.9 dB at 10 GHz with 6 dB associated gain [4] and a low noise corner frequency of 300 Hz [-5]. However, the main important advantage of SiGe-HBTs is the fact that they are silicon based devices.…”

Section: Introductionmentioning

confidence: 99%

“…The progress in SiGe technology has been exceptionally rapid, beginning with the first demonstration of a SiGe HBT in 1987, the announcement of a 75 GHz fT n0n-self-aligned SiGe HBT in 1990 [6], the report in 1992 of a full SiGe ECL-BiCMOS technology with fmax of 60 GHz [7] and continuing in December 1994 with an fmax of 120 GHz [1].…”

Section: Introductionmentioning

confidence: 99%

Mesa and planar SiGe-HBTs on MBE-wafers

Schüppen

Gruhle

Kibbel

1995

J Mater Sci: Mater Electron

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SiGe-HBTs have the potential for outstanding analog and digital or mixed-signal high frequency circuits widely based on standard Si technology. Here we review on MBE grown transistors and circuits. Processes and results of a research-like SiGe HBT and two possible production relevant HBT versions are presented. The high frequency results with fm~× and fT up to 120 GHzand a minimum noise figure of 0.9 dBat 10 GHz demonstrate the advantage of using MBE samples with steep and high base doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base layers, realized by UHV-CVD, is given. In addition, some circuit demonstrators of SiGe-ICs will be presented.

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SiGe-HBTs with high f _T at moderatecurrentdensities

Cited by 77 publications

References 3 publications

Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology

Mesa and planar SiGe-HBTs on MBE-wafers

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SiGe-HBTs with high f T at moderatecurrentdensities

Cited by 77 publications

References 3 publications

Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology

Mesa and planar SiGe-HBTs on MBE-wafers

Contact Info

Product

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SiGe-HBTs with high f _T at moderatecurrentdensities