SiGe Heterojunction Bipolar Transistors

Effect of Mobile Space Charge in Si/Si0.9Ge0.1 Heterojunction Double Drift Impart Oscillator at W-Band Window Frequency

“…Thus for the optimization of the diodes, the doping concentration is chosen to realize an optimum punch through factor. The dc bias current density is varied from 0.5×10 8 Am -2 to 5×10 8 Am -2 and variations of avalanche voltage, breakdown voltage and the conversion efficiency for the heterojunction DDR diode is obtained. The analytic process is repeated for several dc bias current densities and the effect of mobile space charge is observed.…”

“…Moreover Si 1-x Ge x with Si has come up as a technologically important material combination for both electronic and opto-electronic devices [8][9][10][11][12]. Luy et al [13] in Daimler Chrysler have fabricated Si 1-x Ge x (for x=0.6) heterostructure MITATT based on Si and have obtained 25mW of power with a conversion efficiency of 1.03% at 103 GHz.…”

Si and SiGe millimeter-wave integrated circuits

“…The HBT had been first suggested in 1957 by Kroemer [19]. A first suggestion for a SiGe-base HBT for high-frequency applications had been made in 1977 [20], [18]. Detailed investigations of the millimeter-wave SiGe-base HBT were presented by [21]- [29].…”

“…A promising device for millimeter-wave applications is the SiGe-base HBT [18]. The HBT had been first suggested in 1957 by Kroemer [19].…”

Coplanar and microstrip oscillators in SiGe SIMMWIC technology

“…To optimize the RF performance, a thin base of 30 nm width including the spacer-layers to avoid outdiffusion of the Boron dopant into the emitter and collector is used. Details on the fabrication process of the transistors are described in [5] and [6], respectively. A double mesa fabrication process is used with a <100> orientation of the emitter fingers to control the underetch of the emitter finger-metal for a self-aligned base contact.…”