SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition

High-temperature growth of very high germanium content SiGe virtual substrates

“…Depending on the final Ge concentration of the stacks grown (either step-graded SiGe multilayers for growth kinetics studies [15] or SiGe virtual substrates), two different growth protocols were used. For Ge concentrations inferior or equal to 50%, the stacks were grown directly on Si(0 0 1) substrates.…”

“…8.25 Â 10 À4 ) and reduced the F(SiH 2 Cl 2 )/F(H 2 ) mass-flow ratio in discrete steps from 0.0025 down to 3.12 Â 10 À4 in order to grow step graded structures very similar to the ones depicted in Ref. [15]. The only difference is that we have grown those high Ge content step graded structures on polished Si 0.5 Ge 0.5 virtual substrates in order to minimize the lattice mismatch in-between the layers of interest and the Si(0 0 1) substrate.…”

“…This might be assigned to the fact that we had used in Ref. [15] study other GeH 4 mass-flow controllers with a lower maximum flow.…”

“…We have quite recently published some results on the hightemperature growth kinetics of SiGe (in the 20-50% Ge concentration range) in reduced pressure-chemical vapour deposition (RP-CVD) [15]. Those data points have been put to good use for the elaboration of high-quality SiGe virtual substrates with final Ge concentrations in-between 20% and 50%.…”

Kinetics of SiGe chemical vapor deposition from chloride precursors

“…The detailed understanding of the growth processes is necessary to find the optimal growth conditions and to control the properties of the deposited layers. Intensive attempts to explain the growth features are made nowadays [1][2][3]. But the explanation of the experimental trends in terms of a self-consistent model still remains a goal for further work.…”