Kinetics of SiGe chemical vapor deposition from chloride precursors

Lovtsus, A.A.; Segal, A.S.; Sid’ko, A.P.; Талалаев, Р.А.; Storck, P.; Kadinski, L.

doi:10.1016/j.jcrysgro.2005.11.062

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…The data shows that the Ge fraction in the nanowires seems to follow that of Ge fraction in the vapor phase but is always higher in the nanowires than in the gas phase. In prior studies with bulk SiGe alloy deposition, Lovtsus et al, 23 have shown that the Si fraction in the alloys increases with increase in the synthesis temperature. So, in the present study, the Ge fraction of the nanowires increased with increasing temperature indicating that the nanowire composition is controlled by the gas phase composition rather than the synthesis temperature.…”

Section: Resultsmentioning

confidence: 97%

Composition Controlled Synthesis and Raman Analysis of Ge-Rich Si_xGe₁_–_x Nanowires

Meduri

Gu²,

Chen³

et al. 2008

j nanosci nanotechnol

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Here, we report the synthesis of Si(x)Ge(1-x) nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si(x)Ge(1-x) nanowires. Analysis of peak intensities observed for Ge (near 300 cm(-1)) and the Si-Ge alloy (near 400 cm(-1)) allowed accurate estimation of composition compared to that based on the absolute peak positions. The results showed that the fraction of Ge in the resulting Si(x)Ge(1-x) alloy nanowires is controlled by the vapor phase composition of Ge.

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Section: Resultsmentioning

confidence: 97%

Composition Controlled Synthesis and Raman Analysis of Ge-Rich Si_xGe₁_–_x Nanowires

Meduri

Gu²,

Chen³

et al. 2008

j nanosci nanotechnol

View full text Add to dashboard Cite

show abstract

Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures

Storck¹,

Vorderwestner²,

Kondratyev³

et al. 2010

Thin Solid Films

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Kinetics of SiGe chemical vapor deposition from chloride precursors

Cited by 2 publications

References 9 publications

Composition Controlled Synthesis and Raman Analysis of Ge-Rich Si_xGe₁_–_x Nanowires

Composition Controlled Synthesis and Raman Analysis of Ge-Rich Si_xGe₁_–_x Nanowires

Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures

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Kinetics of SiGe chemical vapor deposition from chloride precursors

Cited by 2 publications

References 9 publications

Composition Controlled Synthesis and Raman Analysis of Ge-Rich SixGe1–x Nanowires

Composition Controlled Synthesis and Raman Analysis of Ge-Rich SixGe1–x Nanowires

Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures

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Product

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Composition Controlled Synthesis and Raman Analysis of Ge-Rich Si_xGe₁_–_x Nanowires

Composition Controlled Synthesis and Raman Analysis of Ge-Rich Si_xGe₁_–_x Nanowires