SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications

Krishnamurthy, V.; Hershberger, Kyle M; Eplett, B.; Dekosky, J.; Zhao, Hui; Poulin, D.D.; Rood, R.; Prince, EmmaSue

doi:10.1109/rfic.2010.5477364

Cited by 13 publications

(1 citation statement)

References 5 publications

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“…Li, Lopez, Lie, Chen, Wu and Yang (2010) designed a SiGe cascode differential PA chip and used it in an Envelope-Tracking amplifier measurement setup to achieve high efficiency and high linearity for LTE applications. Krishnamurthy et al (2010) describe a commercial multistage design in SiGe technologies, however focusing on WiMax performance with PAPR of about 6 dB. Good linearity is achieved by dynamically balancing the biasing and generation of harmonics between three amplifier stages.…”

Section: Introductionmentioning

confidence: 99%

A high-linearity SiGe RF power amplifier for 3 G and 4 G small basestations

Johansson

Solati

Fritzin

2012

International Journal of Electronics

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Section: Introductionmentioning

confidence: 99%

A high-linearity SiGe RF power amplifier for 3 G and 4 G small basestations

Johansson

Solati

Fritzin

2012

International Journal of Electronics

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Envelope Tracking Techniques Applied to a Fully Monolithic Silicon‐BasedRFPower Amplifier System

Lie

Lopez

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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This article presents a detailed design example of applying envelope tracking (ET) techniques on a highly monolithic silicon‐based radio‐frequency (RF) power amplifier (PA) to form a high‐efficiency and low‐cost ET‐PA system. An envelope‐tracked SiGe cascode PA with an integrated complementary metal–oxide–semiconductor (CMOS) envelope modulator for mobile WiMAX and 3GPP long‐term evolution (LTE) transmitters (TXs) is shown in this work. The entire ET‐based RF PA system delivers the linear output power of 22.3/24.3 dBm with the overall power‐added efficiency (PAE) of 33%/42% at 2.4 GHz for the WiMAX 64QAM and the 3GPP LTE 16QAM modulations, respectively. Additionally, it exhibits a highly efficient broadband characteristic for multiband applications. Compared with the conventional fixed‐supply cascode PA, our ET‐based cascode PA meets the WiMAX/LTE spectral mask and error vector magnitude (EVM) spec at close to its P 1dB compression without the need for predistortion. The SiGe PA and the CMOS envelope modulator are both designed and fabricated in the TSMC 0.35‐μm SiGe bipolar CMOS (BiCMOS) process on the same die. This work represents an essential integration step toward achieving a fully monolithic ET‐based TX for wideband wireless applications.

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Energy efficiency enhancement and linear amplifications

Lie

2016

RF and Mm-Wave Power Generation in Silicon

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SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications

Cited by 13 publications

References 5 publications

A high-linearity SiGe RF power amplifier for 3 G and 4 G small basestations

A high-linearity SiGe RF power amplifier for 3 G and 4 G small basestations

Envelope Tracking Techniques Applied to a Fully Monolithic Silicon‐BasedRFPower Amplifier System

Energy efficiency enhancement and linear amplifications

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