Signal and charge transfer efficiency of few electrons clocked on microscopic superfluid helium channels

Sabouret, Guillaume; Bradbury, F. R.; Shankar, Shyam; Bert, Julie A.; Lyon, S. A.

doi:10.1063/1.2884693

Cited by 31 publications

(25 citation statements)

References 17 publications

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“…The complementary metal-oxide-silicon (CMOS) process is a standard foundry process that consists of multiple metal layers above a silicon substrate, with the metal layers separated by insulators. The helium channel device [3,5,7,9,10] with turnstiles was fabricated utilizing this technology. Seventy-eight parallel channels were designed using one of the metal layers as the top ground plane, with the metal layer below defining the gates that underlay all the channels as shown in Fig.1.…”

Section: Device Structurementioning

confidence: 99%

“…Electrons are bound above the surface of liquid helium by their weak image potential as well as potentials from underlying electrostatic gates [1,4,12,14]. These underlying gates control the position of electrons on helium and can move them across the sample into various regions [2,10]. The electrons reside in vacuum, about 11nm above the surface, forming a very clean classical two dimensional electron system.…”

Section: Introductionmentioning

confidence: 99%

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Isolating electrons on superfluid helium

Takita

Lyon²

2014

J. Phys.: Conf. Ser.

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Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin quantum bits (qubits). Transferring electrons extremely efficiently in a narrow channel structure with underlying gates has been demonstrated, showing no transfer error while clocking 10 9 pixels in a 3-phase charge coupled device (CCD). While on average, one electron per channel was clocked, it is desirable to reliably obtain a single electron per channel. We have designed an electron turnstile consisting of a narrow (0.8µm) channel and narrow underlying gates (0.5µm) operating across seventy-eight parallel channels. Initially, we find that more than one electron can be held above the small gates. Underlying gates in the turnstile region allow us to repeatedly split these electron packets. Results show a plateau in the electron signal as a function of the applied gate voltages, indicating quantization of the number of electrons per pixel, simultaneously across the seventy-eight parallel channels.

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Section: Device Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Isolating electrons on superfluid helium

Takita

Lyon²

2014

J. Phys.: Conf. Ser.

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“…The dimple radius is over 500 nm on liquid He surface [9] and much larger on solid Ne surface [10]. A collection of electrons on these surfaces can form a classical two-dimensional electron gas (2DEG) [9,10].In the past decades, there has been considerable interest of using the long-coherence orbital and spin states of the electrons on liquid He surface to engineer quantum bits (qubits) [11][12][13][14][15][16]. In particular, since 4 He (excluding 3 He) has zero atomic spin and constitutes an ultraclean superfluid below 1 K [17], electrons in this environment possess a spin-coherence time over 100 s [13,16].…”

mentioning

confidence: 99%

Quantum electronics and optics at the interface of solid neon and superfluid helium

Jin

2020

Quantum Sci. Technol.

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We predict a new quantum electronic structure at the interface between two condensed phases of noble-gas elements: solid neon and superfluid helium. An excess electron injected onto this interface self-confines its wavefunction into a nanometric dome structure whose size varies with pressure. A collection of such electrons can form a classical Wigner crystal visualizable by midinfrared photons. The ultralong spin-coherence time allows the electrons in this system to serve as perfect quantum bits. They can be deterministically arranged on-chip at a spacing of several microns. Their spin states can be controlled and readout by single-electron devices. This unique system offers an appealing new architecture for scalable quantum information processing.Noble-gas elements helium (He) and neon (Ne) are the two most stable chemical elements in the universe. When an excess electron (e − ) approaches helium or neon (He/Ne) atomic cores, it experiences a strong repulsive force due to the Pauli exclusion from the occupied orbital electrons. To enter a condensed liquid or solid He/Ne at low temperature, the excess electron must overcome a potential barrier of the order of 1 eV [1][2][3][4][5]. Inside bulk He/Ne, the ground-state electron pushes away all the surrounding atoms and opens up a nanometric cavity, known as an electron bubble [6,7]. On a He/Ne-to-vacuum surface, the ground-state electron is weakly attracted by its image charge and forms a dimple structure [8]. The dimple radius is over 500 nm on liquid He surface [9] and much larger on solid Ne surface [10]. A collection of electrons on these surfaces can form a classical two-dimensional electron gas (2DEG) [9,10].In the past decades, there has been considerable interest of using the long-coherence orbital and spin states of the electrons on liquid He surface to engineer quantum bits (qubits) [11][12][13][14][15][16]. In particular, since 4 He (excluding 3 He) has zero atomic spin and constitutes an ultraclean superfluid below 1 K [17], electrons in this environment possess a spin-coherence time over 100 s [13,16]. Likewise, 20 Ne and 22 Ne (excluding 21 Ne) also have zero atomic spin, and can form ultrapure solids below 23 K [5,18]. They can potentially serve as a new solidstate storage matrix for qubits. However, by far it is still challenging to precisely position every electron, control and readout its spin states on either of these surfaces. The large dimple radius can result in overlapped electron wavefunctions in nanoscale devices [16,19].In this paper, we reveal a new quantum electronic structure at the interface between solid Ne and superfluid He. We show that each electron is self-confined into a dome structure, whose flat side attaches to the solid Ne and curved side dips into the superfluid He. Employing a bosonic density functional theory (DFT) which can accurately reproduce essential properties of superfluid He and electron bubble [20][21][22], we calculate the ground state, excited states, and optical transitions. The dome diameter decreases with incr...

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“…They can be directed around the surface by electrical gates beneath with very high efficiency (47), for controlled interactions and measurement, meanwhile their spin is expected to couple very weakly to the varying electrical potentials (48).…”

Section: Spins Of Free Electronsmentioning

confidence: 99%

Hybrid Solid-State Qubits: The Powerful Role of Electron Spins

Morton

Lovett

2011

Annu. Rev. Condens. Matter Phys.

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We review progress on the use of electron spins to store and process quantum information, with particular focus on the ability of the electron spin to interact with multiple quantum degrees of freedom. We examine the benefits of hybrid quantum bits (qubits) in the solid state that are based on coupling electron spins to nuclear spin, electron charge, optical photons, and superconducting qubits. These benefits include the coherent storage of qubits for times exceeding seconds, fast qubit manipulation, single qubit measurement, and scalable methods for entangling spatially separated matter-based qubits. In this way, the key strengths of different physical qubit implementations are brought together, laying the foundation for practical solid-state quantum technologies.

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Signal and charge transfer efficiency of few electrons clocked on microscopic superfluid helium channels

Cited by 31 publications

References 17 publications

Isolating electrons on superfluid helium

Isolating electrons on superfluid helium

Quantum electronics and optics at the interface of solid neon and superfluid helium

Hybrid Solid-State Qubits: The Powerful Role of Electron Spins

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