Signature of enhanced spin-orbit interaction in the magnetoresistance of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>LaTiO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>interfaces on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>δ</mml:mi></mml:math>doping

Das, Shubhankar; Hossain, Zakir; Budhani, R. C.

doi:10.1103/physrevb.94.115165

Cited by 14 publications

(18 citation statements)

References 56 publications

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“…While the LAO/STO system has been extensively studied for a wide range of LAO thicknesses, the magnetotransport of LTO/STO has been largely studied in films with thicknesses on the order of or >10 unit cells. This includes electrical gating dependence of the electrical transport and analysis of the magnetoconductivity in the framework of weak anti-localization 21–24 . However, in this thickness regime, our previous studies 15 have demonstrated that the electrical transport is dominated by the metallic conduction inside the entire LTO film induced by the epitaxial strain.…”

Section: Introductionmentioning

confidence: 99%

Nonzero Berry phase in quantum oscillations from giant Rashba-type spin splitting in LaTiO3/SrTiO3 heterostructures

et al. 2018

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The manipulation of the spin degrees of freedom in a solid has been of fundamental and technological interest recently for developing high-speed, low-power computational devices. There has been much work focused on developing highly spin-polarized materials and understanding their behavior when incorporated into so-called spintronic devices. These devices usually require spin splitting with magnetic fields. However, there is another promising strategy to achieve spin splitting using spatial symmetry breaking without the use of a magnetic field, known as Rashba-type splitting. Here we report evidence for a giant Rashba-type splitting at the interface of LaTiO3 and SrTiO3. Analysis of the magnetotransport reveals anisotropic magnetoresistance, weak anti-localization and quantum oscillation behavior consistent with a large Rashba-type splitting. It is surprising to find a large Rashba-type splitting in 3d transition metal oxide-based systems such as the LaTiO3/SrTiO3 interface, but it is promising for the development of a new kind of oxide-based spintronics.

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Section: Introductionmentioning

confidence: 99%

Nonzero Berry phase in quantum oscillations from giant Rashba-type spin splitting in LaTiO3/SrTiO3 heterostructures

et al. 2018

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“…Stephanovich and Dugaev 28 have proposed a simple theoretical analytical model to explain the possible appearance of the metallic conductivity in 2D-LaAlO 3 /SrTiO 3 interface. Shubhankar et al 29 reported a study of modulation of spin-orbit interaction at the LaTiO 3 /SrTiO 3 interface by delta-doping with an iso-structural ferromagnetic perovskite LaCoO 3 . They found that, the sheet carrier density at the interface decreases exponentially with delta-doping thickness.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, this system has attracted a lot of interest. To the best of knowledge of the present author, most investigations on the electronic properties of the SrTiO 3 / LaAlO 3 interface have been done experimentally and theoretically, [5][6][7][11][12][13][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39] while measurements of thermoelectric power for the SrTiO 3 /LaAlO 3 interface are still sparse. [42][43][44] Some literature reports the electronic properties of n-type 6.5STO/1.5LAO interfaces; [45][46][47][48][49] unfortunately, none of them report the transport properties of 6.5STO/1.5LAO.…”

Section: Introductionmentioning

confidence: 99%

Transport properties of the n-type SrTiO₃/LaAlO₃ interface

Reshak

2016

RSC Adv.

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“…This model corresponds to an insertion of one La(TM)O 3 (Sr(TM)O 3 ) buffer layer at the LaAlO 3 /SrTiO 3 interface or a model of a superlattice. Such an approach of inserting one buffer layer has been widely used in the SrTiO 3 ‐based HS to tune interfacial charge carrier density, to use local electron correlations for realizing new functionalities, to improve the electron mobility by reducing impurity scattering, or to modulate the spin–orbit interactions for desired materials properties . Despite the wide usage of 100 mol% δ‐doping in achieving novel materials functionality of HS systems, it is noted that tuning the doping concentration also serves as an efficient approach to modulate properties of both HS and bulk materials.…”

Section: Resultsmentioning

confidence: 99%

δ‐Doping Effects on Electronic and Energetic Properties of LaAlO₃/SrTiO₃ Heterostructure: First‐Principles Analysis of 23 Transition‐Metal Dopants

Cheng

Wang

Luo

et al. 2017

Adv Materials Inter

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of efforts have been invested to develop the LaAlO 3 /SrTiO 3 -based devices such as rectifying junctions, [9] photodetector, [10] single-electron transistor, [11] and fieldeffect transistors. [12,13] Despite the versatile functionality of the LaAlO 3 /SrTiO 3 HS, its practical application is still largely impeded because of its low room-temperature electron mobility (6-10 cm 2 V −1 s −1 ). [14,15] Hence, it is essential to improve the room-temperature 2DEG mobility of the LaAlO 3 /SrTiO 3 HS for further practical applications. Meanwhile, other SrTiO 3based HS have also been explored to find high electron mobility oxide materials. Notable systems are γ-Al 2 O 3 /SrTiO 3 and CaZrO 3 /SrTiO 3 , [16,17] the electron mobilities of which are much higher than that in the LaAlO 3 /SrTiO 3 HS.In principle, the electron mobility can be improved either by increasing scattering time (also called relaxation time) or by reducing electron effective mass. Accordingly, there are several mainstream approaches proposed to improve the electron mobility in the LaAlO 3 /SrTiO 3 HS system. One strategy is to tune the epitaxial strain at the interface including several top layers in the substrate or in the films, which can affect the structural distortion and strain at the interfacial region and thus manipulate electronic properties. It has been experimentally and theoretically proven that controlling the epitaxial strain is one effective way to tune the interfacial charge carrier density. [18][19][20][21][22][23] Actually, a small lattice mismatch between the film and the substrate is expected to improve the crystalline quality of the heterointerface, thus increases the scattering time and accordingly electron mobility, which is extremely difficult to accurately quantify from first-principles calculations, though. For example, very recently, Ariando and co-workers have reported that by replacing LaAlO 3 with cubic (La 0.3 Sr 0.7 ) (Al 0.65 Ta 0.35 )O 3 (LSAT), the lattice mismatch between the film and the SrTiO 3 substrate is reduced from 3.0% to 1.0%, and interfacial electron mobility can be significantly improved (about 35 000 cm 2 V −1 s −1 at 2 K), which is almost 30 times larger than that in the conventional LaAlO 3 /SrTiO 3 . [24] One the other hand, Gunkel et al. [25] proposed that the reduced epitaxial strain in LSAT/SrTiO 3 has only minor effects on the improved mobility. They attributed the increased electron mobility to the suppression of the defects at the interface, which corresponds The 2D electron gas (2DEG) formed at the interface between two insulating perovskite oxides such as LaAlO 3 and SrTiO 3 provides a playground for developing all-oxide electronic devices, though improving the 2DEG mobility is still a great challenge. One possible way of improving the 2DEG mobility is via δ-doping at the heterointerface. As a proof of concept, one recent experiment achieves an ultra-high 2DEG mobility of 73 000 cm 2 V −1 s −1 at the LaAlO 3 / SrTiO 3 heterointerface via Mn δ-doping. Here the electronic and energetic properties ...

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Signature of enhanced spin-orbit interaction in the magnetoresistance ofLaTiO3/SrTiO3interfaces onδdoping

Cited by 14 publications

References 56 publications

Nonzero Berry phase in quantum oscillations from giant Rashba-type spin splitting in LaTiO3/SrTiO3 heterostructures

Nonzero Berry phase in quantum oscillations from giant Rashba-type spin splitting in LaTiO3/SrTiO3 heterostructures

Transport properties of the n-type SrTiO₃/LaAlO₃ interface

δ‐Doping Effects on Electronic and Energetic Properties of LaAlO₃/SrTiO₃ Heterostructure: First‐Principles Analysis of 23 Transition‐Metal Dopants

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Signature of enhanced spin-orbit interaction in the magnetoresistance ofLaTiO3/SrTiO3interfaces onδdoping

Cited by 14 publications

References 56 publications

Nonzero Berry phase in quantum oscillations from giant Rashba-type spin splitting in LaTiO3/SrTiO3 heterostructures

Nonzero Berry phase in quantum oscillations from giant Rashba-type spin splitting in LaTiO3/SrTiO3 heterostructures

Transport properties of the n-type SrTiO3/LaAlO3 interface

δ‐Doping Effects on Electronic and Energetic Properties of LaAlO3/SrTiO3 Heterostructure: First‐Principles Analysis of 23 Transition‐Metal Dopants

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Transport properties of the n-type SrTiO₃/LaAlO₃ interface

δ‐Doping Effects on Electronic and Energetic Properties of LaAlO₃/SrTiO₃ Heterostructure: First‐Principles Analysis of 23 Transition‐Metal Dopants