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In antiferromagnets, the efficient transport of spin-waves has until now only been observed in the insulating antiferromagnet hematite, where circularly (or a superposition of pairs of linearly) polarized spin-waves diffuse over long distances. Here, we report long-distance spin-transport in the antiferromagnetic orthoferrite YFeO3, where a different transport mechanism is enabled by the combined presence of the Dzyaloshinskii-Moriya interaction and externally applied fields. The magnon decay length is shown to exceed hundreds of nanometers, in line with resonance measurements that highlight the low magnetic damping. We observe a strong anisotropy in the magnon decay lengths that we can attribute to the role of the magnon group velocity in the transport of spin-waves in antiferromagnets. This unique mode of transport identified in YFeO3 opens up the possibility of a large and technologically relevant class of materials, i.e., canted antiferromagnets, for long-distance spin transport.

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Spintronic devices often require the ability to locally change the magnetic configuration of ferromagnetic structures on a sub-micron scale. A promising route for achieving this goal is the use of heavy metal/ferromagnetic heterostructures where current flowing through the heavy metal layer generates field-like and anti-damping like torques on the magnetic layer. Commonly, such torques are used to switch magnets with a uniaxial anisotropy between two uniformly magnetized states. Here, we use such torques to switch magnetization in Ta/Ni0.80Fe0.20 heterostructures with uniaxial and biaxial anisotropy, where in the latter the magnetization is non-uniform. The anisotropies are induced by shape and the magnetic state is monitored using the planar Hall effect. As structures with several easy axes induced by shape can be part of a magnetic memory element, the results pave the way for multi-level magnetic memory with spin-orbit torque switching.

Spin-orbit torques emerge as a promising method for manipulating magnetic configurations of spintronic devices. Here, we show that these torques can induce a magnetization reversal via domain wall propagation which may open new ways in developing novel spintronic devices and in particular in realizing high-density multi-level magnetic memory. Our devices are bi-layer heterostructures of Ni0.8Fe0.2 on top of β-Ta patterned in the form of two or three crossing ellipses which exhibit in the crossing area shape-induced biaxial and triaxial magnetic anisotropy, respectively. We demonstrate field-free switching between discrete remanent magnetic states of the structures by spin-orbit torques induced by flowing electrical current through one of the ellipses. We note switchings induced by the coupling between the ellipses where current flowing in one ellipse triggers a reversal in a neighboring ellipse which propagates from the center outwards. Numerical tools successfully simulate the observed coupling-induced switching using experimentally extracted parameters.