Signature of Magnetization in Xe Ions Implanted ZnO: Correlation with Oxygen Defects as Probed by Photoelectron Spectroscopy

Mishra, Dilip Kumar; Pattanaik, Shreenu; Dash, S.; Sharma, Manoj Kumar; Kumar, Pravin; Ray, Sekhar C.; Chatterjee, Ratnamala; Kanjilal, D.

doi:10.1166/jnn.2017.15179

Cited by 3 publications

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“…The free electrons trapped with the oxygen vacancies can form BMPs. When the polarons start to overlap and form a spin split band, different magnetic domains start interacting and we get a long range ferromagnetic ordering [35]. The differences in RT-FM in ZnO SCs before and after Xe ion irradiation is strongly dependent on the Zn 3d emission peak [53] described by the VB-PES spectra in the next section.…”

Section: Resultsmentioning

confidence: 85%

“…The study of these core level spectra is important to understand the point defects (vacancy as well as interstitial defects related to Zn and O). However, only vacancy related defects are responsible for this RT-FM in ZnO SCs [35]. The oxygen deficiency in ZnO SCs could be due to either oxygen vacancy (deep donors) or Zn interstitials (shallow donors).…”

Section: Resultsmentioning

confidence: 98%

“…These type I (or type II) defects in ZnO SCs are mainly due to oxygen vacancies and/ or zinc interstitials near the surface of the ZnO SCs, which are assumed to be one of the reasons for the room temperature ferromagnetic behaviour in ZnO SCs [52]. Moreover, oxygen deficient ZnO SCs provide strong evidence of the formation of BMPs that may occur at the Zn 3d level in Xe ion implanted ZnO SCs with different fluences [35]. The free electrons trapped with the oxygen vacancies can form BMPs.…”

Section: Resultsmentioning

confidence: 99%

“…After the collisions, all the atoms are in thermal motion at high temperature and a large number of defects/vacancies are induced in the ZnO matrix [66,67]. Since Xe is a non-magnetic element and cannot contribute to the magnetization, the presence of ferromagnetism in Xe ion implanted ZnO is essentially driven by ion induced defects (oxygen vacancies, zinc vacancies, and/or zinc interstitials), which do not scale up with fluences due to dynamic annealing processes [35]. Thus, we cannot expect the larger saturation magnetization if the doping level is even higher than ZnO:Xe 2.…”

Section: Resultsmentioning

confidence: 99%

“…Silva et al [33] observed a weak RT-FM in ZnO SCs by irradiation with 100 and 200 KeV N + and Ar + ions. Xe ions have also been used to create a sufficient amount of defects to observe the room temper ature ferromagnetic signal in SC ZnO [34,35]. However, these studies are very limited in discussing RT-FM due to implantation, generated defects with the help of x-ray absorption near edge structure (XANES).…”

Section: Introductionmentioning

confidence: 99%

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Tuning of the electronic structure and magnetic properties of xenon ion implanted zinc oxide

Ghosh¹,

Ray²,

Pattanaik³

et al. 2018

J. Phys. D: Appl. Phys.

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A correlation between the electronic structure and magnetic properties of ZnO single crystals (ZnO SCs) and 300 keV xenon ion (Xe 3+ ) implanted ZnO SCs has been studied using x-ray absorption near edge structure (XANES) spectroscopy, valence band photoemission spectroscopy (VB-PES), x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and a superconducting quantum interference device-type magnetometer. The XANES studies revealed that the number of unoccupied p-states in the implanted ZnO SCs is higher than in the pristine ZnO SCs. In the implanted ZnO SCs, the binding energy of the Zn 2p 3/2 core level peak shifted to higher energy which further confirmed the increase in the valence band maximum (VBM) energy level. The VBM of the xenon ion (Xe 3+ ) implanted ZnO SCs increased from 3.17-3.49 eV, obtained from UPS (He-I) measurements. A VB-PES study revealed that the number of electrons in the valence band of the O 2p-Zn 4sp hybridized states of the implanted ZnO SCs is higher than in the pristine ZnO SCs. The magnetic M-H loops demonstrated enhanced room temperature ferromagnetism in the Xe implanted ZnO SCs, attributable to the increasing number of surface defects and native defect sites in oxygen vacancies and zinc interstitials.

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Section: Resultsmentioning

confidence: 85%

Section: Resultsmentioning

confidence: 98%