Significance of Interface Design Aspects and Characteristics in Cu/SiCp Composites Fabricated by the Powder Metallurgy Route

Kavithaa, T. S.; Rangaraj, Lingappa; Avadhani, S. S.

doi:10.1007/s11661-018-5089-y

Cited by 4 publications

(3 citation statements)

References 17 publications

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“…Cu particles have a shape evolution similar to the previous study which in the final result the Cu powder mixture has a flake-like shape [8][9][10]. The reduction in particle size in Cu and Sn elements indicates that the mixing speed parameter affects the friction between powder particles [11]. In addition, the angle on the wall of the double cone mixer machine gives the mixing effect due to the influence of centrifugal force if the mixing speed is increased.…”

Section: Resultssupporting

confidence: 74%

Optimization of Mixing Speed Parameter for Homogeneous Cu-Sn Composite

Widyastuti

Kurniawan

Sa'di

et al. 2023

KEM

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The crucial manufacturing process in powder metallurgy (PM) is the mixing process. This process ensures blending sufficiently to achieve a uniform and consistent product. Various mixing parameters provide an impact on product properties and fluency during the mixing process. The mixing speed is the most considered parameter which affects the homogeneity and properties of the PM product. The powder of 89,95% wt Cu and 10%wt Sn was mixed at 14, 22, 30, 38 rpm respectively for 120 minutes using a double cone mixer to obtain homogeneity pow-der mixture at 40% filling rate mixer. The mixed powder was compacted at 700 MPa in the 4-column compacting machine. Green compact product was sintered at 200°C for 20 minutes. Sintered specimens were investigated on densification and hardness test. The microstructure was investigated by SEM/EDX and X-ray diffraction. The result showed that the Cu particle form to flake shape, while the Sn particle tends to form irregular rod-like. Particle size on Cu-Sn composite most being finer along with increasing mixing speed. Homogenously distributed dispersed Cu and Sn particles can be achieved successfully at 30 rpm. Furthermore, the hardness test value was 94,2 HRF. The density was 7,45 g/cm3 and the porosity was 15,19% Particle size decrease to 4.517 μm with increasing mixing speed.

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Section: Resultssupporting

confidence: 74%

Optimization of Mixing Speed Parameter for Homogeneous Cu-Sn Composite

Widyastuti

Kurniawan

Sa'di

et al. 2023

KEM

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“…Similar studies have been conducted using NiP 2 and Y 2 O 3 [114], as well as coating materials such as Ti, Cr, Fe, Ni, and Al [121][122][123]. Although some coating layers have achieved certain effects, achieving perfect encapsulation of the surface of the particle reinforcement phase to completely eliminate direct contact reaction between Cu and SiC is challenging.…”

Section: Methodsmentioning

confidence: 83%

“…Si dissolves into Cu, forming a Cu-Si solid solution, while pure carbon remains at the interface between Cu and SiC [ 113 ]. This interface reaction, represented by Equation (1) [ 114 ], significantly reduces TC of the composites. To prevent the interface reaction between Cu and SiC, diffusion barriers need to be established [ 115 ].…”

Section: Current Status Of Metal-based Electronic Packaging Materialsmentioning

confidence: 99%

Advancements in SiC-Reinforced Metal Matrix Composites for High-Performance Electronic Packaging: A Review of Thermo-Mechanical Properties and Future Trends

Lai

Niu

et al. 2023

Micromachines

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With the advancement of semiconductor technology, chip cooling has become a major obstacle to enhancing the capabilities of power electronic systems. Traditional electronic packaging materials are no longer able to meet the heat dissipation requirements of high-performance chips. High thermal conductivity (TC), low coefficient of thermal expansion (CTE), good mechanical properties, and a rich foundation in microfabrication techniques are the fundamental requirements for the next generation of electronic packaging materials. Currently, metal matrix composites (MMCs) composed of high TC matrix metals and reinforcing phase materials have become the mainstream direction for the development and application of high-performance packaging materials. Silicon carbide (SiC) is the optimal choice for the reinforcing phase due to its high TC, low CTE, and high hardness. This paper reviews the research status of SiC-reinforced aluminum (Al) and copper (Cu) electronic packaging materials, along with the factors influencing their thermo-mechanical properties and improvement measures. Finally, the current research status and limitations of conventional manufacturing methods for SiC-reinforced MMCs are summarized, and an outlook on the future development trends of electronic packaging materials is provided.

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