Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets

Abstract

When evaluating sub-100 nm circuits for hardness to Single Event Transients (SETs), the choice of strike model is shown to have a notable effect upon observed upsets. A method utilizing distributed charges to model strikes to adjacent devices is illustrated and utilized to compare the effect of strike kernel models in such Charge Sharing SETS (CSSETS). Bias-dependent models are shown to more accurately predict expected physical observations and Technology Computer Aided Design (TCAD) simulation, especially when such charge-sharing upsets must be considered.Index Terms-Charge sharing, radiation hardening by design (RHBD), radiation hardness assurance methodology, single event effects, single event transients (SETs).

Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation

“…With such advanced technologies, the track effect, i.e., the radial ionization profile, is expected to be critical [14] with multiplecell upsets (MCUs) acting as the main contributor [15][16][17]. As feature sizes scale down, charge collection at multiple nodes (i.e., charge sharing) due to a single particle hit result from the decrease in spacing dimensions between cells [4][5][6][7]. The sensitivity of the SEE is expected to increase and recent studies have demonstrated the occurrence of SEs due to protons [8,9] and muons [10] for advanced nano-scale electronics.…”

An Increase of Efficiency in Modeling Transient Processes in CMOS-Microchips Consider-ing Single Radiation Effects

“…В процессе моделирования переходных процессов в КМОП-микросхемах необходимо учитывать одиночные радиационные эффекты (ОРЭ). На качественном уровне большинство физических механизмов, лежащих в основе ОРЭ и определяющих чувст-вительность к ним КМОП-микросхем, изучено достаточно хорошо [7][8][9][10][11][12][13][14][15][16][17][18][19]. Однако из-за вероятностного характера ОРЭ результаты качественного анализа не удается привычным образом конвертировать в стандартные программы электрического моделирования микросхем на элементном уровне, что особенно важно при моделировании аналоговых блоков КМОП-микросхем.…”

Atmospheric radiation environment analyses based-on CCD camera at various mountain altitudes and underground sites

“…With such advanced technologies the track effect, namely the radial ionization profile, is expected to be critical multiple-cell upsets being the main contributor [9][10][11]. As feature sizes scales down, charge collection at multiple nodes (i.e., charge sharing) due to a single particle hit results from the decrease spacing dimensions between cells [12][13][14][15]. Then the sensitivity to SEE is expected to increase and recent studies have shown the occurrence of soft-errors due to protons [16,17] and to muons [18] for advanced nano-scales electronics.…”