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1 1 Abstract-This paper describes a high temperature voltage comparator and an operational amplifier in a 1.2 µm silicon carbide CMOS process. These circuits are used as building blocks for designing a high temperature SiC low-side over current protection circuit. The over current protection circuit is used in the protection circuitry of a SiC FET gate driver in power converter applications. The op amp and the comparator have been tested at 400 °C and 550 °C temperature respectively. The op amp has an input common-mode range of 0-11.2 V, DC gain of 60 dB, unity gain bandwidth of 2.3 MHz and a phase margin of 48° at 400 °C. The comparator has a rise time and a fall time of 38 ns and 24 ns, respectively, at 550 °C. The over current protection circuit, implemented with these analog building blocks, is designed to sense a voltage across a sense resistor up to 0.5 V. Keywords-comparator, op amp, current sensor, silicon carbide, high temperature electronics, wide bandgap ICs. I.K. Addington is with the

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