Significant Improvement of Photo-Stimulated Luminescence of Ba₄(Si₃O₈)₂:Eu²⁺by Co-Doping with Tm³⁺

Abstract

High-brightness green photo-stimulated luminescence (PSL) is observed in Ba4(Si3O8)2:Eu2+ phosphor when thulium is co-doped upon the infrared stimulation at 808 nm after pre-irradiation with ultraviolet (UV) light. Both the photoluminescence (PL) and PSL spectra of Ba4(Si3O8)2:Eu2+, Tm3+ reveal that only one asymmetric broad emission band located at 496 nm is observed, which is ascribed to the 5d-4f transitions of Eu2+ ions in two different sites. The optimized PSL of Ba4(Si3O8)2:Eu2+ is obtained with co-doping with Tm3+ as the concentration of which reaches 0.02 mol, whose intensity is increased by a factor about 12 in comparison with that of Tm3+ free samples. It could be ascribed to the new deep traps (TB and TC) formed for the incorporation of Tm3+.

Color Variation Between PSL and PL in CaAl2Si2O8:Tb3+ with the Assistance of Trap Level

“…As can be seen, the PSL intensity is declining with increasing stimulation time. This phenomenon demonstrates that there is no existence of an up‐conversion process and the luminescence comes from the release of accumulated energy in the traps of the samples …”

Effect of temperature on the luminescence and decay behavior of divalent europium in lithium barium borate

“…For example, in LiMgPO 4 :Eu 2+ luminescence spectra consist of two distinct broad emission bands peaking at 380 and 490 nm related to 4f 6 5d 1 → 4f 7 luminescence of Eu 2+ and to europium‐trapped exciton, respectively . The emission bands centered at 490 and 540 nm observed in Ba 4 (Si 3 O 8 ) 2 :Eu 2+ could be attributed to Eu 2+ occupied in different Ba 2+ sites . Eu 2+ luminescence from five different crystallographic sites has been reported in a novel red phosphor, Ca 15 Si 20 O 10 N 30 :Eu 2+ .…”

Optical Energy Storage Properties of (Ca1−xSrx)2Si5N8: Eu2+, Tm3+ Solid Solutions

“…Different from persistent luminescence, the latter PSL only appears after additional stimuli and is blamed on the presence of deep charge carrier traps, whose energy levels correspond to that of the stimulating irradiation (visible‐ or infrared‐light). The optically stimulated storage phosphor materials exhibiting PSL phenomenon can be used as erasable and rewritable optical memory media for many advanced optical storage applications, such as biomarkers, imaging plates, and solar cells …”