Significant tunneling magnetoresistance and excellent spin filtering effect in CrI₃-based van der Waals magnetic tunnel junctions

Abstract

<p>The transport properties of CrI₃/<italic>h</italic>-BN/<italic>n</italic>·CrI₃ (<italic>n</italic> = 1, 2, 3, 4) MTJs under positive bias voltages exhibit an interesting odd-even effect. Significant tunneling magnetoresistance, a perfect spin filtering effect and remarkable negative differential resistance were obtained.</p>

Tunable tunneling magnetoresistance in in-plane double barrier magnetic tunnel junctions based on B vacancy h-NB nanoribbons

“…For example, van der Waals MTJs with 2D magnetic materials Fe 3 GeTe 2 as the electrode and h-BN 23 or MoS 2 24 as the tunneling barrier were achieved experimentally. Moreover, large tunneling magnetoresistance (TMR) ratios were predicted theoretically for Fe 3 GeTe 2 /graphene/Fe 3 GeTe 2 , 25 Fe 3 GeTe 2 /h-BN/Fe 3 GeTe 2 , 25 CrI 3 /h-BN/CrI 3 , 26 FeCl 2 /MoS 2 /FeCl 2 , 27 1T-CrTe 2 /graphene/1T-CrTe 2 , 28 1T-CrTe 2 /h-BN/1T-CrTe 2 , 28 etc. van der Waals MTJs and the TMR ratio reaches 69.62.…”

Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

“…143 The TMR of this spin-filter MTJs (sf-MTJs) can be drastically enhanced with the increase of the thickness of CrI3 layers, which is corresponding with the former theoretical results. 142 When the thickness of CrI3 increases to four layers, the TMR ratio can reach 19,000% at low temperature. The four-layer CrI3 MTJ points to the potential for using layered antiferromagnets for engineering multiple magnetoresistance states in an individual multiple-spin-filter MTJ.…”

“…141 And n-layer CrI3 in the high-temperature phase exhibits interlayer AFM coupling, which provides natural pinning layer for CrI3. Yan et al 142 studied the electron transport properties of CrI3/BN/n-CrI3 (n=1, 2, 3, 4) MTJs as shown in Figs. 5 (a-d), and found the n=3 MTJ shows a fully polarized spin current with ~3600% TMR ratio when at the equilibrium state.…”

Two-dimensional magnetic atomic crystals

“…Because of the layered structure and local magnetic moment, the layered 2D magnetic crystal transition is ideal substrate materials. 187,188 Placing 2D magnetic crystals on magnetic insulators provides an efficient method of spin-or electricallypolarized 2D heterostructures, especially when the magnetic insulators are also vdWs crystals. These integrated vdWs heterostructures are suitable for interfacial exchange interactions due to their easy atomically-sharp interface regulation.…”