2007
DOI: 10.1039/b705741e
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Silane- and triazine-containing hole and exciton blocking material for high-efficiency phosphorescent organic light emitting diodes

Abstract: One of the important factors for high efficiency phosphorescent organic light-emitting devices is to confine triplet excitons within the emitting layer. We synthesized and characterized a new hole blocking material containing silane and triazine moieties, 2,4-diphenyl-6-(49-triphenylsilanylbiphenyl-4-yl)-1,3,5-triazine (DTBT). Electrophosphorescent devices fabricated using the material as the hole-blocking layer and N,N9-dicarbazolyl-4,49-biphenyl (CBP) doped with fac-tris(2-phenylpyridine)iridium [Ir(ppy) 3 ]… Show more

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Cited by 79 publications
(22 citation statements)
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“…On the contrary, no injection barrier was observed for hole injection from NPB into the layer of yellow phosphor Y‐Pt doped TCTA in the B/B/Y device due to direct injection/charge trap (further explained in Section 2.5), as shown in Figure 2c. In addition, BAlq with μ e higher than that for TAZ ( μ e = 3.1 × 10 −5 cm 2 V −1 s −1 29 for BAlq and 1.3 × 10 −5 cm 2 V −1 s −1 30 for TAZ at the same electric field of 1.0 MV cm −1 ) contributes to a lower driving voltage observed with the modified WOLEDs.…”
Section: Resultsmentioning
confidence: 90%
“…On the contrary, no injection barrier was observed for hole injection from NPB into the layer of yellow phosphor Y‐Pt doped TCTA in the B/B/Y device due to direct injection/charge trap (further explained in Section 2.5), as shown in Figure 2c. In addition, BAlq with μ e higher than that for TAZ ( μ e = 3.1 × 10 −5 cm 2 V −1 s −1 29 for BAlq and 1.3 × 10 −5 cm 2 V −1 s −1 30 for TAZ at the same electric field of 1.0 MV cm −1 ) contributes to a lower driving voltage observed with the modified WOLEDs.…”
Section: Resultsmentioning
confidence: 90%
“…However, the performances of DSX-LPP-based device B are nevertheless better than those of device A because NPB avoids the quenching of the holes near the anode. Finally, to prevent holes from crossing the device and reaching the cathode without recombination, a hole blocking layer (HBL) of bathocuproine (BCP, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) with a HOMO level of À6.4 eV [18,90,91] has been added (devices D).…”
Section: Oleds With Dsx-lpp and Dsx-if As Emitting Layersmentioning
confidence: 99%
“…2,13,19 Although multiple HILs are applied to match the energy level of ITO and deep-blue emitters to improve the hole injection, the big HOMO energy level gap among HILs, e.g., PEDOT:PSS and PVK, is still difficult to overcome to maximize the performance of deep-blue emitters. 20 The electron-deficient 1,3,5-triazine derivatives have been widely used as electron transport materials, [21][22][23] hole transport materials 24 and bipolar transport materials. 25 However, there is no report on hole injection materials based on electron-deficient 1,3,5-triazine and electron-rich compounds such as phenol and its derivatives with preferred solution processing ability.…”
Section: Introductionmentioning
confidence: 99%