2008
DOI: 10.1364/oe.16.006408
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Silica-based monolithic sensing plates for waveguide-mode sensors

Abstract: We developed a monolithic sensing plate for a waveguide-mode sensor. The plate consists of a SiO(2) glass substrate and a thin silicon layer the surface of which is thermally oxidized to form a SiO(2) glass waveguide. We confirmed that the sensing plate is suitable for high-sensitivity detection of molecular adsorption at the waveguide surface. In addition, a significant enhancement of the sensitivity of the sensor was achieved by perforating the waveguide with holes with diameters of a few tens of nanometers … Show more

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Cited by 58 publications
(49 citation statements)
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“…The EFC-WM sensor uses a sensing plate with a multilayer structure that consists of a dielectric waveguide, higher refractive index layer, and glass substrate [30]. The sensing plate illuminated under the Kretschmann configuration operates as a sensor that is capable of detecting modifications in the dielectric environment near the waveguide surface by measuring changes in reflectivity [40].…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The EFC-WM sensor uses a sensing plate with a multilayer structure that consists of a dielectric waveguide, higher refractive index layer, and glass substrate [30]. The sensing plate illuminated under the Kretschmann configuration operates as a sensor that is capable of detecting modifications in the dielectric environment near the waveguide surface by measuring changes in reflectivity [40].…”
Section: Methodsmentioning
confidence: 99%
“…The prism was made of SiO 2 glass, and the bottom angle of the prism was 38°C. A monolithic sensing plate that we developed previously was applied [30]. The monolithic sensing plate consisted of a SiO 2 glass substrate, single crystalline Si layer, and thermally grown SiO 2 waveguide.…”
Section: Methodsmentioning
confidence: 99%
“…The sensor chip had a layered structure, with a 36-nm Si layer and a 364-nm SiO 2 layer on a SiO 2 substrate (Shin-Etsu Chemical Co., Ltd., Tokyo, Japan). The method of fabrication of the sensor chip has been described in detail previously26. The SiO 2 surface of the sensor chip was modified with a self-assembled monolayer (SAM) using N-[3-(triethoxysilyl)propyl]-3,6,9,12-tetraoxatridecanamide to prevent non-specific adsorption27.…”
Section: Methodsmentioning
confidence: 99%
“…[16] [17] As reported in Synthesiology, [1] in the earliest waveguide mode sensor, the waveguide modes were formed in the ref lective film layer and the waveguide layer at a certain angle of incidence. When the angle sweep is done using the He-Ne laser at a wavelength of 632.8 nm as the light source, the reflection intensity declines at a certain angle.…”
Section: Development Of Portable Waveguide Mode Sensormentioning
confidence: 99%