Silica covered stannic oxide nanoparticles—an easily prepared robust substrate for optical sensors

Abstract

This paper describes a facile way to prepare a photophysically inert sensor substrate. Stannic oxide encapsulated silica nanoparticles with average diameters between 30 and 70 nm have been prepared by one-pot reverse-phase emulsion methodology. The constituents and core/shell morphology of the nanoparticles were demonstrated by electron microscopic technology, energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). X-ray diffraction (XRD) was employed to provide additional constitutional and structural information. It has been shown that nanoparticles prepared by this method are optically clear in suspension. After anchoring optical indicators, this nanoparticle can be utilized as a sensor module both in biology and other analytical areas.

A Telechelic Fluorescent Indicator Based on Polymer Conformational Change for Free Copper(II) Ions

“…SpectraPor RC Tubing (cutoff Mw = 3500 Da) was purchased from Repligen at Waltham, MA, USA for dialysis use. N-((4′-Methyl-[2,2′-bipyridin]-4-yl)methyl)-N-propylacrylamide (Bpy) was prepared as previously reported [31,32]. [33].…”

Photochemical fabrication of defect-abundant Pd/SnO2 with promoted performance for dioctyl phthalate gas sensing

“…6 Recently, it has been reported that the metal oxide semiconductor (MOS) gas sensors can respond to the gas released by the overheating PVC cables, so as to achieve the effect of early warning. [7][8][9] The development of a fast and selective response MOS gas sensor for DOP has been attracting considerable attention in this field. [10][11][12][13] Tin dioxide (SnO 2 ) is an n-type semiconductor material with high thermal and chemical stability, [14][15][16][17][18][19] excellent electrical properties, low cost, small size, simple crystal structure, and easy integration properties.…”

“…6 Recently, it has been reported that the metal oxide semiconductor (MOS) gas sensors can respond to the gas released by the overheating PVC cables, so as to achieve the effect of early warning. 7–9 The development of a fast and selective response MOS gas sensor for DOP has been attracting considerable attention in this field. 10–13…”