Silica film preparation by chemical vapor deposition using vacuum ultraviolet excimer lamps

Kurosawa, Kiyoshi; Yanagida, Hiroaki; Takezoe, Noritaka; Takezoe,; Kawasaki, Yasuhiro; Fujita, Genki; Miyano, Junichi; Yokotani, Atsushi

doi:10.1109/cleo.2000.906816

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“…The use of tetra-ethoxy-silane (Si(OC2H5),) has also been reported [6]. Low pressure mercury lamp [2,3,5], deuterium lamp [I], microwave excited argon discharge lamp 141 and a 200 mJ at 50 Hz and 23 ns duration pulse ArF laser [7] and other excimer lasers [8] are some of the light sources reported for Photo-CVD.…”

Section: Introductionmentioning

confidence: 99%

Very low photo-CVD deposition rate process for high quality thin SiO/sub 2/ films

Sanchez-Z

Munguía

Estrada

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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Very low deposition rates, below 0.56 nm/min, of Si02 were investigated using photoinduced chemical vapor deposition (Photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiOl. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.

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