2006
DOI: 10.1134/s0020168506020087
|View full text |Cite
|
Sign up to set email alerts
|

Silicide formation during heat treatment of thin Ni-Pt and Ni-Pd solid-solution films and Pt/Ni bilayers on (111)Si

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
6
0

Year Published

2011
2011
2024
2024

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 11 publications
(6 citation statements)
references
References 10 publications
0
6
0
Order By: Relevance
“…The PdSi formation at temperatures significantly below the widely accepted nucleation temperature in the pure Pd-Si system does not result from the effect of entropy of mixing due to the direct formation of a Ni 1-x Pd x Si solid solution, as previously suggested. 8,[10][11][12][13][14] Rather, it is triggered by a reduction in surface energy, induced by the presence of the isomorphous NiSi phase. The coexistence of NiSi and PdSi transforms into a Ni 1-x Pd x Si solution at higher temperatures, which in turn results in an improved monosilicide stability by postponing NiSi 2 nucleation due to entropy of mixing.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The PdSi formation at temperatures significantly below the widely accepted nucleation temperature in the pure Pd-Si system does not result from the effect of entropy of mixing due to the direct formation of a Ni 1-x Pd x Si solid solution, as previously suggested. 8,[10][11][12][13][14] Rather, it is triggered by a reduction in surface energy, induced by the presence of the isomorphous NiSi phase. The coexistence of NiSi and PdSi transforms into a Ni 1-x Pd x Si solution at higher temperatures, which in turn results in an improved monosilicide stability by postponing NiSi 2 nucleation due to entropy of mixing.…”
Section: Discussionmentioning
confidence: 99%
“…8,9 The effect is generally explained similar to Pt by stating that a Ni 1-x Pd x Si solid solution forms. 8,[10][11][12][13][14] On the other hand, significant differences between the Pt-Si and Pd-Si solid phase reaction imply that the formation of a Ni 1-x Pd x Si solid solution cannot be simply assumed. Although the binary reaction sequences for both elements are similar, i.e., M !…”
Section: Introductionmentioning
confidence: 99%
“…The diffusion rates of Pt and Ni atoms are different because of their different atomic radius, with Ni atoms diffusing more rapidly compared to Pt atoms. [44] As a result, the surface layer of Ni 0.95 Pt 0.05 Si film exhibits an enrichment of Pt atoms, potentially augmenting the catalytic activity on the photocathode surface. The HADDF-STEM image (Figure 3h) exhibits the apparent lattice fringes with both a spacing of 0.20 nm, which are consistent with the d-spacing of the ( 112) and (1-12) crystal planes of Orthorhombic NiSi (JCPDS#38-0844), respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Recovery percentage increases with power until 800 W, while it decreases for higher radiation times and power. This may be due to the formation of silicides, which are binary compounds formed by both transition metals and silicon under high pressure and temperature conditions; 47,48 these compounds may interfere with the metal extraction and their subsequent analysis. Thus, 2.5 minutes and 800 W were taken as the optimum values for further analyses.…”
Section: Optimization Of Microwave Assisted Micellar Extractionmentioning
confidence: 99%