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A model of nucleation on crystal substrate point defects is discussed. It is suggested that nucleation on point defects is predominant a t high temperatures (> 250 to 300 "C for NaCI). For the first time the mobility of point defects and their capture by the growing nucleus-substrate interface are considered. The calculations are in qualitative agreement with the experimental data. IlpennaraeTcR Monenh 3apox.1c~e~1.1~1 Ha ToqeqHLix necjjemax HpacTaJImiseciwCi noZ1n o r n~~i . IlpeEnonaraeTcn, TO a a p o m n e~~e Ha ReamiTax npeo6naaaeT n p~ tmcomx 9esHbIx ne@ewon II 3 a x~a~ IIX pacTyueCi MeXi@a3HOfi rpamiueti 3aponb1llr-no~nom~a. TeMnepaTypaX (> 250 A 0 300 "c AJIR NaCI). HIIepBble J7qMTbIBaeTCR IlOHBIImHoCTL TO-Pe3ynbTaTbI paCqeTa KaYeCTBeHHO CoI' naCyKlTCH C 3KCnepHMeHTaJILHbIMM AaHHbIMM.

A model of oriented growth of metal islands on crystal substrate point defects is discussed. It is suggested that the final orientation of an island depends on the point defect density in the island‐substrate interface at the moment the island reaches some critical size. For the first time an expression for the epitaxial temperature is obtained in terms of both, the condensation parameters (substrate temperature and deposition rate) and the real structure (point defect density). The results of the model are in good agreement with the experimental observations of oriented growth.

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