Silicide resistors for integrated circuits

Waits, Robert K.

doi:10.1109/proc.1971.8449

Cited by 14 publications

(16 citation statements)

References 15 publications

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“…As discussed in section II.B, the WB sensor's temperature dependence is mainly determined by that of its resistors. Since both the value and the TC of on-chip sensing resistors spread [21], resistor-based temperature sensors usually require a multi-point (≥2) trim to achieve good accuracy, e.g., 0.12°C with a 3-point trim [3].…”

Section: B Non-linearity Correction and Calibrationmentioning

confidence: 99%

A Resistor-Based Temperature Sensor With a 0.13 pJ $\cdot$ K2 Resolution FoM

Pan

Luo

Shalmany

et al. 2018

IEEE J. Solid-State Circuits

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This paper describes a high-resolution energy-efficient CMOS temperature sensor, intended for the temperature compensation of MEMS/Quartz frequency references. The sensor is based on silicided poly-silicon thermistors, which are embedded in a Wien-bridge RC filter. When driven at a fixed frequency, the filter exhibits a temperature-dependent phase shift, which is digitized by an energy-efficient continuous-time phase-domain delta-sigma modulator. Implemented in a 0.18µm CMOS technology, the sensor draws 87µA from a 1.8V supply and achieves a resolution of 410µK rms in a 5ms conversion time. This translates into a state-of-the-art resolution FoM of 0.13pJ•K 2. When packaged in ceramic, the sensor achieves an inaccuracy of 0.2°C (3σ) from −40°C to 85°C after a single-point calibration and a correction for systematic non-linearity. This can be reduced to ±0.03°C (3σ) after a 1 st-order fit. In addition, the sensor exhibits low 1/f noise and packaging shift.

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Section: B Non-linearity Correction and Calibrationmentioning

confidence: 99%

A Resistor-Based Temperature Sensor With a 0.13 pJ $\cdot$ K2 Resolution FoM

Pan

Luo

Shalmany

et al. 2018

IEEE J. Solid-State Circuits

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“…Chromium, silicon, and their alloys are very important materials in the manufacture of thin film resistors and microelectronic devices. [51][52][53][54] It has been suggested that chromium silicide is a potentially important contact material in future nanosystems because chromium silicide nanostructures can reduce the energy barrier between the metal and semiconductor layers. 55 Chromium-doped silicon clusters have been studied by many researchers.…”

Section: Introductionmentioning

confidence: 99%

Structures and magnetic properties of CrSin− (n = 3–12) clusters: Photoelectron spectroscopy and density functional calculations

Kong

Zheng

2012

The Journal of Chemical Physics

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Chromium-doped silicon clusters, CrSi(n)(-) (n = 3-12), were investigated with anion photoelectron spectroscopy and density functional theory calculations. The combination of experimental measurement and theoretical calculations reveals that the onset of endohedral structure in CrSi(n)(-) clusters occurs at n = 10 and the magnetic properties of the CrSi(n)(-) clusters are correlated to their geometric structures. The most stable isomers of CrSi(n)(-) from n = 3 to 9 have exohedral structures with magnetic moments of 3-5μ(B) while those of CrSi(10)(-), CrSi(11)(-), and CrSi(12)(-) have endohedral structures and magnetic moments of 1μ(B).

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“…Crystalline and amorphous transition-metal silicide (M x Si y ) phases are of immense technological importance for their roles in electronic materials, − and in processes that form and break chemical bonds to silicon. − Elemental silicon is a reactant in the Direct Process, which is practiced on a large industrial scale to convert silicon and MeCl to Me 2 SiCl 2 , via intermediate copper silicide phases such as Cu 3 Si. ,,, In addition, silicide phases mediate the reverse type of reaction, in which silanes (e.g., SiH 4 , PhSiH 3 , and Ph 2 SiH 2 ) are used as the silicon source for producing nanoscaled silicon structures such as nanowires and nanocrystals. − The latter processes involve the controlled crystallization of elemental Si at elevated temperatures (>300 °C), from a metal silicide phase formed by activation of SiH and/or SiC bonds.…”

mentioning

confidence: 99%