Silicon- and oxygen-codoped graphene from polycarbosilane and its application in graphene/n-type silicon photodetectors

Guo, Hsiu-An; Jou, Shyankay; Mao, Tzu-Zing; Huang, Bohr–Ran; Huang, Yuting; Yu, Huan; Hsieh, Yi‐Fang; Chen, Chung-Chi

doi:10.1016/j.apsusc.2018.09.067

Cited by 17 publications

(2 citation statements)

References 51 publications

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“…Figure 3(b) shows the bandgap of graphene. When graphene is exposed to air, charge transfer between graphene, oxygen and water vapor leads to hole doping, which makes graphene present a weak p-type property [34,35]. Therefore, n-type silicon is a better choice for the graphene/silicon Schottky structure.…”

Section: Resultsmentioning

confidence: 99%

An on-chip integrated microfiber–silicon–graphene hybrid structure photodetector

Wang¹,

Chen²,

Zhou³

et al. 2021

Laser Phys.

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Silicon photonic devices have great potential for photocommunication, and silicon-based photodetectors have attracted wide attention. Here, we report an on-chip integrated microfiber–silicon–graphene hybrid structure photodetector that can operate in the visible and near-infrared ranges. The detector has a responsivity of ∼136 mA W−1 at 808 nm and a rise time of ∼1.1 μs. At a reverse bias of 5 V, we achieved a responsivity of ∼1350 mA W−1. Our device provides an option for on-chip integration.

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Section: Resultsmentioning

confidence: 99%

An on-chip integrated microfiber–silicon–graphene hybrid structure photodetector

Wang¹,

Chen²,

Zhou³

et al. 2021

Laser Phys.

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“…An area of potential interest lies in the enhancement of the performance of silicon photodiodes through the integration of graphene oxide variants. Additionally, GO has demonstrated a remarkable potential in enhancing the optoelectronic characteristics of photodetectors owing to its exceptional electrical and optical properties [5][6][7][8][9]. Reduced graphene oxide (rGO), produced by reducing GO, restores a significant portion of the original graphene's electronic structure, thereby improving charge mobility and optoelectronic response.…”

Section: Introductionmentioning

confidence: 99%

Performance enhancement of silicon photodiodes through the integration of green synthesized reduced graphene oxide variants

Yıldız,

Surucu,

Mert Balaban

et al. 2024

Phys. Scr.

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This study examines the potential of enhancing the optoelectronic properties of silicon photodiodes by producing and analyzing heterostructures that incorporate reduced graphene oxide (rGO) synthesized with silicon using different reduction methods. Graphene oxide (GO) was manufactured utilizing an enhanced Hummers' method. Subsequently, reduced graphene oxides (rGOs) were made by chemical and thermal reduction processes, which are considered ecologically friendly. The use of ascorbic acid to produce ascorbic acid-reduced graphene oxide (ArGO) and thermal processing to produce thermally reduced graphene oxide (TrGO) have significantly contributed to the development of high-performance photodiode technology. The electrical properties were carefully assessed under different levels of light, revealing the substantial impact of integrating reduced graphene oxides (rGOs) on the performance of the diodes. Comparing ArGO/Si, TrGO/Si, and GO/Si heterostructures shows that customized rGO has the potential to greatly influence the responsivity and efficiency of Si-based optoelectronic devices, making a significant contribution to photodiode technology.

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Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

Pandit

Jang

Jeong

et al. 2023

Adv Materials Inter

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The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts huge interest in the field of GaN‐based ultraviolet photodetector technology. However, the presence of high dark current deteriorates the photodetector performance by diminishing several figures of merit. In this work, enhanced figures of merit are demonstrated by employing interdigitated p‐GaN finger structure on the top of the AlGaN/GaN heterostructure. The commonly present high dark current in p‐GaN/AlGaN/GaN planar photodetector is largely reduced (from ≈µA to few pA) by etching the p‐GaN, excluding the electrode region. Furthermore, by using a graphene transparent electrode along with the p‐GaN interdigitated fingers on AlGaN/GaN heterostructure, ultraviolet photodetectors with superior sensitivity (3.55 × 106) and ultrahigh detectivity (1.91 × 1014 cm Hz1/2 W−1) are realized at 360 nm. A comparison of graphene/p‐GaN and Ni/Au/p‐GaN interdigitated fingers and planar p‐GaN (with interdigitated graphene contacts) all on AlGaN/GaN heterostructure allows to understand the dominant roles of electrode transparency and the heterojunction structure. The simple and high electron mobility transistor‐compatible fabrication process of UV detectors provides a unique application in the field of UV sensing technology.

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Silicon- and oxygen-codoped graphene from polycarbosilane and its application in graphene/n-type silicon photodetectors

Cited by 17 publications

References 51 publications

An on-chip integrated microfiber–silicon–graphene hybrid structure photodetector

An on-chip integrated microfiber–silicon–graphene hybrid structure photodetector

Performance enhancement of silicon photodiodes through the integration of green synthesized reduced graphene oxide variants

Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

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