Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics

Wolkow, Robert A.; Livadaru, Lucian; Pitters, Jason; Taucer, Marco; Piva, P. G.; Salomons, Mark; Cloutier, Martin; Martins, Bruno V. C.

doi:10.1007/978-3-662-43722-3_3

Cited by 41 publications

(23 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Motivated by recent developments in Si-DB quantum dots which have shown their potential to serve as emerging building blocks for nano-scale logic circuits [5], [6], [13], SiQAD has been developed to enable the design and simulation of Si-DB circuits. Three included simulation engines have been introduced: SimAnneal, a ground state electron configuration Fig.…”

Section: Discussionmentioning

confidence: 99%

SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits

Wolkow

Walus

et al. 2020

IEEE Trans. Nanotechnology

Self Cite

View full text Add to dashboard Cite

This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational logic. Several simulation tools are included, each able to inform the designer on various aspects of their designs: a ground-state electron configuration finder, a non-equilibrium electron dynamics simulator, and an electric potential landscape solver with clocking electrode support. Simulations have been compared against past experimental results to inform the electron population estimation and dynamic behavior. New logic gates suitable for this platform have been designed and simulated, and a clocked wire has been demonstrated. This work paves the way for the exploration of the vast and fertile design space of atomic silicon dangling bond quantum dot circuits.

show abstract

Section: Discussionmentioning

confidence: 99%

SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits

Wolkow

Walus

et al. 2020

IEEE Trans. Nanotechnology

Self Cite

View full text Add to dashboard Cite

show abstract

“…The main advantages of NML technology is the very low power consumption [12][1] [13]. Finally Silicon Atomic QCA aims at reproducing the QCA principle using individual atoms as quantum-dot, showing until now extremely promising experimental results [14]. Among these QCA implementations, NML logic offers some specific advantage.…”

Section: Introductionmentioning

confidence: 99%

Modeling, Design, and Analysis of MagnetoElastic NML Circuits

Giri

Vacca

Causapruno

et al. 2016

IEEE Trans. Nanotechnology

View full text Add to dashboard Cite

With the predicted end of CMOS scaling process, researchers started to study several alternative technologies. Among them NanoMagnet Logic (NML) offers advantages complementary to MOS transistors especially for its magnetic nature. Its intrinsic memory capability makes it suitable for zero stand-by power and logic-in-memory applications. NML requires a clock system that, if based on a magnetic field, highly increases the circuit dynamic power consumption. We have recently proposed a solution based on the magnetoelastic effect (ME-NML) [1] and on currently available fabrication processes, which drastically reduces dynamic power consumption. However, many questions still remain unanswered. Which kind of applications are best suited for this technology? How can we effectively design, analyze and compare ME-NML circuits? Does it really offer advantages over state-of-the-art CMOS transistors? In this paper we provide answers to all these questions and the results prove that this technology offers indeed extremely good performance. We have designed a Galois Field Multiplier with a systolic array structure to reduce interconnection overhead. We developed a new RTL model that allows us to easily describe and simulate circuits of any complexity, evaluating at the same time the performance and keeping into account technology constraints. We approach for the first time in the NML scenario the design of ME-NML circuits adopting the standardcell method used in standard technologies and fulfill the design down to the physical level. The same circuit is designed also with NML technology based on magnetic fields and with a 28 nm low power CMOS bulk technology for comparison. The CMOS circuit is obtained through physical place&route with a commercial tool, providing therefore the most accurate comparison ever presented in literature. Power analysis shows that ME-NML circuits have a considerable advantage over both NML and state of the art CMOS bulk technology. As a further by-product results clearly highlight which kind of architectures can better exploit the true potential of NML technology.

show abstract

“…Using HDL without further processing, various device architectures are possible including dangling bond wires or logic devices. 14,15,16 In addition to providing electrical contrast, HDL can introduce chemical contrast on the surface where the passivating H layer has been removed, in effect creating a template for further chemical modification. This chemical modification has been demonstrated on silicon and other surfaces, showing selectivity for deposition of metals, 17 insulators, 18 and even semiconductors.…”

Section: Introductionmentioning

confidence: 99%

“…This chemical modification has been demonstrated on silicon and other surfaces, showing selectivity for deposition of metals, 17 insulators, 18 and even semiconductors. 16,19 Each of these examples produces two dimensional structures, so other processing steps must be used to produce true three dimensional structures with the atomically resolved control promised by HDL. Previously, this has required repeated patterning, 19,20,21 annealing, 22 or less well resolved processes such as tip-based e-beam induced deposition.…”

Section: Introductionmentioning

confidence: 99%

Atomically Traceable Nanostructure Fabrication

Ballard

Dick

McDonnell

et al. 2015

JoVE

View full text Add to dashboard Cite

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process being used in order to maintain exquisite control over both feature size and feature density. Here, we demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication. Hydrogen depassivation lithography is the first step of the nanoscale fabrication process followed by selective atomic layer deposition of up to 2.8 nm of titania to make a nanoscale etch mask. Contrast with the background is shown, indicating different mechanisms for growth on the desired patterns and on the H passivated background. The patterns are then transferred into the bulk using reactive ion etching to form 20 nm tall nanostructures with linewidths down to ~6 nm. To illustrate the limitations of this process, arrays of holes and lines are fabricated. The various nanofabrication process steps are performed at disparate locations, so process integration is discussed. Related issues are discussed including using fiducial marks for finding nanostructures on a macroscopic sample and protecting the chemically reactive patterned Si(100)-H surface against degradation due to atmospheric exposure.

show abstract

Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics

Cited by 41 publications

References 37 publications

SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits

SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits

Modeling, Design, and Analysis of MagnetoElastic NML Circuits

Atomically Traceable Nanostructure Fabrication

Contact Info

Product

Resources

About